'Well-Run Technology'
(11)- M.2 NVMe SSD 512GB Patriot P300, Interface: PCIe3.0 x4 / NVMe 1.3, M2 Type 2280 form factor, Sequential Read 1700 MB/s, Sequential Write 1100 MB/s, Random Read 290K IOPS, Random Write 260K IOPS, HMB technology, NANDXtend ECC technology, TBW: 240TB, 3D NANM.2 NVMe SSD 512GB Patriot P300, Interface: PCIe3.0 x4 / NVMe 1.3, M2 Type 2280 form factor, Sequential Read 1700 MB/s, Sequential Write 1100 MB/s, Random Read 290K IOPS, Random Write 260K IOPS, HMB technology, NANDXtend ECC technology, TBW: 240TB, 3D NAN Объём накопителя 512 ГБ Тип ячеек памяти 3D NAND TLC Максим
- M.2 NVMe SSD 2.0TB Patriot P300, Interface: PCIe3.0 x4 / NVMe 1.3, M2 Type 2280 form factor, Sequential Read 2100 MB/s, Sequential Write 1650 MB/s, Random Read 290K IOPS, Random Write 260K IOPS, HMB technology, NANDXtend ECC technology, TBW: 320TB, 3D NANM.2 NVMe SSD 2.0TB Patriot P300, Interface: PCIe3.0 x4 / NVMe 1.3, M2 Type 2280 form factor, Sequential Read 2100 MB/s, Sequential Write 1650 MB/s, Random Read 290K IOPS, Random Write 260K IOPS, HMB technology, NANDXtend ECC technology, TBW: 320TB, 3D NAN Объём накопителя 2000 ГБ Тип ячеек памяти 3D NAND TLC Макси
- 2.5" SSD 256GB Silicon Power Ace A58, SATAIII, SeqReads: 560 MB/s, SeqWrites: 530 MB/s, Controller Phison S11, MTBF 1.5mln, SLC Cash, BBM, Internal Auto-Copy Technology, SP Toolbox, 7mm, 3D NAND TLC2.5" SSD 256GB Silicon Power Ace A58, SATAIII, SeqReads: 560 MB/s, SeqWrites: 530 MB/s, Controller Phison S11, MTBF 1.5mln, SLC Cash, BBM, Internal Auto-Copy Technology, SP Toolbox, 7mm, 3D NAND TLC Объем 256 ГБ Страна-производитель Китай (Тайвань) Скорость чтения 510 МБ/с Скорость записи 480 МБ/с Форм-фактор 2.5"
- M.2 NVMe SSD 480GB Patriot P310, Interface: PCIe3.0 x4 / NVMe 1.3, M2 Type 2280 form factor, Sequential Read 1700 MB/s, Sequential Write 1500 MB/s, Random Read 280K IOPS, Random Write 250K IOPS, SmartECC technology, EtE data path protection, TBW: 240TB, 3M.2 NVMe SSD 480GB Patriot P310, Interface: PCIe3.0 x4 / NVMe 1.3, M2 Type 2280 form factor, Sequential Read 1700 MB/s, Sequential Write 1500 MB/s, Random Read 280K IOPS, Random Write 250K IOPS, SmartECC technology, EtE data path protection, TBW: 240TB, 3 Объём накопителя 480 ГБ
- M.2 NVMe SSD 512GB Lexar NM710, Interface: PCIe4.0 x4 / NVMe1.4, M2 Type 2280 form factor, Sequential Reads/Writes 5000 MB/s/ 2600 MB/s, Random Read/Write 500K IOPS/ 600K IOPS, MAP1602A-F1C, LDPC, HMB 3.0 and SLC Cache technology, TBW: 300TBW, MTBF: 1.5mlM.2 NVMe SSD 512GB Lexar NM710, Interface: PCIe4.0 x4 / NVMe1.4, M2 Type 2280 form factor, Sequential Reads/Writes 5000 MB/s/ 2600 MB/s, Random Read/Write 500K IOPS/ 600K IOPS, MAP1602A-F1C, LDPC, HMB 3.0 and SLC Cache technology, TBW: 300TBW, MTBF: 1.5ml Объём накопителя 512 ГБ Тип ячеек памяти 3D NAND TLC Максим
- 3.5" HDD 2.0TB Toshiba P300 , 5400rpm, 128MB, NCQ-technology, SATAIII HDWD220UZSVA3.5" HDD 2.0TB Toshiba P300 , 5400rpm, 128MB, NCQ-technology, SATAIII HDWD220UZSVA Емкость накопителя 2 ТБ Тип жесткого диска Внутренний Интерфейс подключения SATAIII Форм-фактор 3.5" Скорость вращения шпинделя 5400 об/мин. Объем буфера 128 МБ
- M.2 NVMe SSD 1.0TB Silicon Power XD80 w/Heatsink, Interface:PCIe3.0 x4 / NVMe1.3, M2 Type 2280 form factor, Sequential Reads 3400 MB/s / Writes 3000 MB/s, MTBF 2mln, HMB, SLC+DRAM Cache, RAID engine technology, SP Toolbox, Phison E12S, 3D NAND TLCM.2 NVMe SSD 1.0TB Silicon Power XD80 w/Heatsink, Interface:PCIe3.0 x4 / NVMe1.3, M2 Type 2280 form factor, Sequential Reads 3400 MB/s / Writes 3000 MB/s, MTBF 2mln, HMB, SLC+DRAM Cache, RAID engine technology, SP Toolbox, Phison E12S, 3D NAND TLC Тип внутренний Объем 1000 ГБ Форм-фактор M.2 Интерфейс M.2 PCI-E 3.0 4
- M.2 NVMe SSD 1.0TB Lexar NM710, Interface: PCIe4.0 x4 / NVMe1.4, M2 Type 2280 form factor, Sequential Reads/Writes 5000 MB/s/ 4500 MB/s, Random Read/Write 500K IOPS/ 600K IOPS, MAP1602A-F1C, LDPC, HMB 3.0 and SLC Cache technology, TBW: 600TBW, MTBF: 1.5mlM.2 NVMe SSD 1.0TB Lexar NM710, Interface: PCIe4.0 x4 / NVMe1.4, M2 Type 2280 form factor, Sequential Reads/Writes 5000 MB/s/ 4500 MB/s, Random Read/Write 500K IOPS/ 600K IOPS, MAP1602A-F1C, LDPC, HMB 3.0 and SLC Cache technology, TBW: 600TBW, MTBF: 1.5ml Объём накопителя 1000 ГБ Максимальная скорость записи, мб/с 4
- M.2 NVMe SSD 1.0TB Lexar NM790, Interface: PCIe4.0 x4 / NVMe2.0, M2 Type 2280 form factor, Sequential Reads/Writes 7400 MB/s/ 6500 MB/s, Random Read/Write 1000K IOPS/ 900K IOPS, LDPC, HMB 3.0 and SLC Cache technology, TBW: 1000TBW, MTBF: 1.5mln hours, MicM.2 NVMe SSD 1.0TB Lexar NM790, Interface: PCIe4.0 x4 / NVMe2.0, M2 Type 2280 form factor, Sequential Reads/Writes 7400 MB/s/ 6500 MB/s, Random Read/Write 1000K IOPS/ 900K IOPS, LDPC, HMB 3.0 and SLC Cache technology, TBW: 1000TBW, MTBF: 1.5mln hours, Mic Формфактор: M.2 Объем SSD: 1000 ГБ Скорость чтения: 7400 МБ/с
- M.2 NVMe SSD 1.92 ГБ Patriot P310, Interface: PCIe3.0 x4 / NVMe 1.3, M2 Type 2280 form factor, Sequential Read 2100 MB/s, Sequential Write 1800 MB/s, Random Read 280K IOPS, Random Write 250K IOPS, SmartECC technology, EtE data path protection, TBW: 960TB,M.2 NVMe SSD 1.92 ГБ Patriot P310, Interface: PCIe3.0 x4 / NVMe 1.3, M2 Type 2280 form factor, Sequential Read 2100 MB/s, Sequential Write 1800 MB/s, Random Read 280K IOPS, Random Write 250K IOPS, SmartECC technology, EtE data path protection, TBW: 960TB, Объём накопителя 1.92 ГБ Тип ячеек памяти 3D NAND TLC Макс
- M.2 NVMe SSD 2.0TB Patriot P400, w/Graphene Heatshield, Interface: PCIe4.0 x4 / NVMe 1.3, M2 Type 2280 form factor, Sequential Read 4900 MB/s, Sequential Write 4400 MB/s, Random Read 550K IOPS, Random Write 500K IOPS, Thermal Throttling Technology, EtE daM.2 NVMe SSD 2.0TB Patriot P400, w/Graphene Heatshield, Interface: PCIe4.0 x4 / NVMe 1.3, M2 Type 2280 form factor, Sequential Read 4900 MB/s, Sequential Write 4400 MB/s, Random Read 550K IOPS, Random Write 500K IOPS, Thermal Throttling Technology, EtE da Объем 2 ТБ Форм-фактор M.2 Интерфейс подключения PCI Express 4