iR 2520, 2525, 2530, 2520I, 2530I, 2525I
(2)- M.2 NVMe SSD 1.0TB GOODRAM IRDM w/Heatsink, Interface: PCIe3.0 x4 / NVMe1.3, M2 Type 2280 form factor, Sequential Reads/Writes 3200 MB/s/ 3000 MB/s, Random 4K Read/Write 255K IOPS/ 500K IOPS, 8-Channel Phison E12 w/DRAM buffer, 3D NAND TLCM.2 NVMe SSD 1.0TB GOODRAM IRDM w/Heatsink, Interface: PCIe3.0 x4 / NVMe1.3, M2 Type 2280 form factor, Sequential Reads/Writes 3200 MB/s/ 3000 MB/s, Random 4K Read/Write 255K IOPS/ 500K IOPS, 8-Channel Phison E12 w/DRAM buffer, 3D NAND TLC Объем 1 ТБ Страна-производитель Китай (Тайвань) Скорость чтения до 3200 МБ/с С
- M.2 NVMe SSD 2.0TB GOODRAM IRDM w/Heatsink, Interface: PCIe3.0 x4 / NVMe1.3, M2 Type 2280 form factor, Sequential Reads/Writes 3200 MB/s/ 3000 MB/s, Random 4K Read/Write 490K IOPS/ 500K IOPS, 8-Channel Phison E12 w/DRAM buffer, TBW 1200, 3D NAND TLCM.2 NVMe SSD 2.0TB GOODRAM IRDM w/Heatsink, Interface: PCIe3.0 x4 / NVMe1.3, M2 Type 2280 form factor, Sequential Reads/Writes 3200 MB/s/ 3000 MB/s, Random 4K Read/Write 490K IOPS/ 500K IOPS, 8-Channel Phison E12 w/DRAM buffer, TBW 1200, 3D NAND TLC Объем 2 ТБ Скорость чтения 3200 Скорость записи 3000 Форм-фактор M.2