D2303 Xperia M2
(47)- M.2 NVMe SSD 256GB GOODRAM PX500 Gen2, Interface: PCIe3.0 x4 / NVMe1.3, M2 Type 2280 form factor, Sequential Reads/Writes 1850 MB/s/ 950 MB/s, Random (4k QD64) Read/Write 102K IOPS/ 230K IOPS, SMI 2263XT, TBW: 70TB, 3D NAND TLC, heat-dissipating thermal pM.2 NVMe SSD 256GB GOODRAM PX500 Gen2, Interface: PCIe3.0 x4 / NVMe1.3, M2 Type 2280 form factor, Sequential Reads/Writes 1850 MB/s/ 950 MB/s, Random (4k QD64) Read/Write 102K IOPS/ 230K IOPS, SMI 2263XT, TBW: 70TB, 3D NAND TLC, heat-dissipating thermal Бренд GOODRAM Модель PX500 Форм-фактор накопителя M.2 NVMe Памя
- M.2 NVMe SSD 256GB GOODRAM PX500 Gen.2, PCIe3.0 x4 / NVMe1.3, M2 Type 2280, Read: 1850 MB/s, Write: 950 MB/s, Controller SMI 2263XT, 3D NAND Flash SSDPR-PX500-256-80M.2 NVMe SSD 256GB GOODRAM PX500 Gen.2, PCIe3.0 x4 / NVMe1.3, M2 Type 2280, Read: 1850 MB/s, Write: 950 MB/s, Controller SMI 2263XT, 3D NAND Flash SSDPR-PX500-256-80 Объем (ГБ) 256 Интерфейс PCIe3.0 x4 / NVMe1.3 Скорость чтения (МБ/с) 1850 Скорость записи (МБ/с) 950 Время наработки на отказ (ч) 1500000 Форм-фактор
- M.2 NVMe SSD 250GB GOODRAM PX600 Gen2, Interface: PCIe4.0 x4 / NVMe1.4, M2 Type 2280 form factor, Sequential Reads/Writes 3200 MB/s / 1700 MB/s, TBW: 100TB, MTBF: 2mln hours, 3D NAND TLC, heat-dissipating thermal padM.2 NVMe SSD 250GB GOODRAM PX600 Gen2, Interface: PCIe4.0 x4 / NVMe1.4, M2 Type 2280 form factor, Sequential Reads/Writes 3200 MB/s / 1700 MB/s, TBW: 100TB, MTBF: 2mln hours, 3D NAND TLC, heat-dissipating thermal pad Объём накопителя: 250 ГБ Тип ячеек памяти 3D NAND TLC Максимальная скорость записи, мб/с 1700 Мак
- M.2 NVMe SSD 250GB Kingston NV2, Interface: PCIe4.0 x4 / NVMe1.3, M2 Type 2280 form factor, Sequential Reads 3000 MB/s, Sequential Writes 1300 MB/s, Phison E19T controller, TBW: 80TB, 3D QLC NAND flashM.2 NVMe SSD 250GB Kingston NV2, Interface: PCIe4.0 x4 / NVMe1.3, M2 Type 2280 form factor, Sequential Reads 3000 MB/s, Sequential Writes 1300 MB/s, Phison E19T controller, TBW: 80TB, 3D QLC NAND flash Объём накопителя 250 ГБ Тип ячеек памяти QLC 3D NAND Максимальная скорость записи, мб/с 1300 Максимальная скорос
- M.2 NVMe SSD 250GB Patriot P400 Lite, w/Graphene Heatshield, Interface: PCIe4.0 x4 / NVMe 1.4, M2 Type 2280 form factor, Sequential Read 3200 MB/s, Sequential Write 1300 MB/s, Random Read 110K IOPS, Random Write 300K IOPS, EtE data path protection, TBW: 1M.2 NVMe SSD 250GB Patriot P400 Lite, w/Graphene Heatshield, Interface: PCIe4.0 x4 / NVMe 1.4, M2 Type 2280 form factor, Sequential Read 3200 MB/s, Sequential Write 1300 MB/s, Random Read 110K IOPS, Random Write 300K IOPS, EtE data path protection Объём накопителя: 250 ГБ Тип ячеек памяти 3D NAND TLC Максимальная
- M.2 NVMe SSD 512GB GOODRAM PX500 Gen.2, PCIe3.0 x4 / NVMe1.3, M2 Type 2280, Read: 2000 MB/s, Write: 1600MB/s, Controller SMI 2263XT, 3D NAND Flash SSDPR-PX500-512-80M.2 NVMe SSD 512GB GOODRAM PX500 Gen.2, PCIe3.0 x4 / NVMe1.3, M2 Type 2280, Read: 2000 MB/s, Write: 1600MB/s, Controller SMI 2263XT, 3D NAND Flash SSDPR-PX500-512-80 Бренд GOODRAM Модель PX500 Форм-фактор накопителя M.2 NVMe Память накопителя 512 ГБ Тип чипов 3D-NAND TLC Скорость чтения 2000 МБ/с Скорость записи 16
- M.2 NVMe SSD 256GB ADATA XPG SX8200 PRO, PCIe3.0 x4 / NVMe1.3, M2 Type 2280 , Read: 3500 MB/s, Write: 3000 MB/s, Controller SMI, 3D NAND TLC, ASX8200PNP-256GT-CM.2 NVMe SSD 256GB ADATA XPG SX8200 PRO, PCIe3.0 x4 / NVMe1.3, M2 Type 2280 , Read: 3500 MB/s, Write: 3000 MB/s, Controller SMI, 3D NAND TLC, ASX8200PNP-256GT-C Твердотельный накопитель SX8200 Pro M.2 2280 — на сегодняшний день самый скоростной из твердотельных накопителей XPG, предназначенный для любителей ПК, гей
- M.2 NVMe SSD 250GB Samsung 980 , PCIe3.0 x4 / NVMe1.3, M2 Type 2280, Read: 3500 MB/s, Write: 2300 MB/s, Read /Write: 250,000/550,000 IOPS, Controller Samsung Phoenix, 3D TLC (V-NAND)M.2 NVMe SSD 250GB Samsung 980 , PCIe3.0 x4 / NVMe1.3, M2 Type 2280, Read: 3500 MB/s, Write: 2300 MB/s, Read /Write: 250,000/550,000 IOPS, Controller Samsung Phoenix, 3D TLC (V-NAND) Объём накопителя 256 ГБ Тип ячеек памяти TLC
- M.2 NVMe SSD 512GB GOODRAM PX500 Gen2, Interface: PCIe3.0 x4 / NVMe1.3, M2 Type 2280 form factor, Sequential Reads/Writes 2000 MB/s/ 1600 MB/s, Random (4k QD64) Read/Write 173K IOPS/ 140K IOPS, SMI 2263XT, TBW: 330TB, 3D NAND TLC, heat-dissipating thermalM.2 NVMe SSD 512GB GOODRAM PX500 Gen2, Interface: PCIe3.0 x4 / NVMe1.3, M2 Type 2280 form factor, Sequential Reads/Writes 2000 MB/s/ 1600 MB/s, Random (4k QD64) Read/Write 173K IOPS/ 140K IOPS, SMI 2263XT, TBW: 330TB, 3D NAND TLC, heat-dissipating thermal Тип устройства:SSD Тип устройства:SSD Производитель:GOODRAM Мо
- M.2 NVMe SSD 500GB Silicon Power UD85, Interface:PCIe4.0 x4 / NVMe1.4, M2 Type 2280 form factor, Sequential Reads 3600 MB/s / Writes 2400 MB/s, MTBF 1.5mln, HMB, ECC, SLC Cache, E2E Data Protection, LDPC, Phison E21T, 3D NAND TLCM.2 NVMe SSD 500GB Silicon Power UD85, Interface:PCIe4.0 x4 / NVMe1.4, M2 Type 2280 form factor, Sequential Reads 3600 MB/s / Writes 2400 MB/s, MTBF 1.5mln, HMB, ECC, SLC Cache, E2E Data Protection, LDPC, Phison E21T, 3D NAND TLC Бренд SILICON POWER Модель UD85 Форм-фактор накопителя M.2 NVMe Память накопителя 500 ГБ
- M.2 NVMe SSD 500GB Kingston NV2, Interface: PCIe4.0 x4 / NVMe1.3, M2 Type 2280 form factor, Sequential Reads 3500 MB/s, Sequential Writes 2100 MB/s, Phison E19T controller, TBW: 160TB, 3D QLC NAND flashM.2 NVMe SSD 500GB Kingston NV2, Interface: PCIe4.0 x4 / NVMe1.3, M2 Type 2280 form factor, Sequential Reads 3500 MB/s, Sequential Writes 2100 MB/s, Phison E19T controller, TBW: 160TB, 3D QLC NAND flash Объём накопителя 500 ГБ Тип ячеек памяти QLC 3D NAND Максимальная скорость записи, мб/с 2100 Максимальная скоро
- M.2 NVMe SSD 250GB Samsung 970 EVO Plus, PCIe3.0 x4 / NVMe1.3, M2 Type 2280, Read: 3500 MB/s, Write: 2300 MB/s, Read /Write: 250,000/550,000 IOPS, Controller Samsung Phoenix, 3D TLC (V-NAND)M.2 NVMe SSD 250GB Samsung 970 EVO Plus, PCIe3.0 x4 / NVMe1.3, M2 Type 2280, Read: 3500 MB/s, Write: 2300 MB/s, Read /Write: 250,000/550,000 IOPS, Controller Samsung Phoenix, 3D TLC (V-NAND) Объём накопителя, ГБ 250 Максимальная скорость записи, Мбайт/с 2300 Максимальная скорость чтения, Мбайт/с 3500
- M.2 NVMe SSD 500GB GOODRAM PX600 Gen2, Interface: PCIe4.0 x4 / NVMe1.4, M2 Type 2280 form factor, Sequential Reads/Writes 4700 MB/s / 1700 MB/s, TBW: 160TB, MTBF: 2mln hours, 3D NAND TLC, heat-dissipating thermal padM.2 NVMe SSD 500GB GOODRAM PX600 Gen2, Interface: PCIe4.0 x4 / NVMe1.4, M2 Type 2280 form factor, Sequential Reads/Writes 4700 MB/s / 1700 MB/s, TBW: 160TB, MTBF: 2mln hours, 3D NAND TLC, heat-dissipating thermal pad Объём накопителя: 500 ГБ Тип ячеек памяти 3D NAND TLC Максимальная скорость записи, мб/с 1700 Мак
- M.2 NVMe SSD 500GB Samsung 980 , PCIe3.0 x4 / NVMe1.3, M2 Type 2280, Read: 3500 MB/s, Write: 2300 MB/s, Read /Write: 250,000/550,000 IOPS, Controller Samsung Phoenix, 3D TLC (V-NAND)M.2 NVMe SSD 500GB Samsung 980 , PCIe3.0 x4 / NVMe1.3, M2 Type 2280, Read: 3500 MB/s, Write: 2300 MB/s, Read /Write: 250,000/550,000 IOPS, Controller Samsung Phoenix, 3D TLC (V-NAND) форм-фактор: 2280, M емкость: 500 ГБ скорость чтения/записи: 3100 МБ/с / 2600 МБ/с интерфейс подключения: M.2, PCI-E 3.0 x4 тип флэш-п
- M.2 NVMe SSD 500GB Patriot P400 Lite, w/Graphene Heatshield, Interface: PCIe4.0 x4 / NVMe 1.4, M2 Type 2280 form factor, Sequential Read 3500 MB/s, Sequential Write 2400 MB/s, Random Read 220K IOPS, Random Write 500K IOPS, EtE data path protection, TBW: 2M.2 NVMe SSD 500GB Patriot P400 Lite, w/Graphene Heatshield, Interface: PCIe4.0 x4 / NVMe 1.4, M2 Type 2280 form factor, Sequential Read 3500 MB/s, Sequential Write 2400 MB/s, Random Read 220K IOPS, Random Write 500K IOPS, EtE data path protection, TBW: 2 Объём накопителя 500 ГБ Тип ячеек памяти 3D NAND TLC Максималь
- M.2 NVMe SSD 500GB Corsair MP600 GS, Interface: PCIe4.0 x4 / NVMe1.4, M2 Type 2280 form factor, Sequential Reads 4800 MB/s / Writes 3500 MB/s, Random Read / Write IOPS - 450K / 700K, Phison PS2021-E21T, AES-256 encryption, TBW - 300 TB, 176L Micron 3D TLCM.2 NVMe SSD 500GB Corsair MP600 GS, Interface: PCIe4.0 x4 / NVMe1.4, M2 Type 2280 form factor, Sequential Reads 4800 MB/s / Writes 3500 MB/s, Random Read / Write IOPS - 450K / 700K, Phison PS2021-E21T, AES-256 encryption, TBW - 300 TB, 176L Micron 3D TLC
- M.2 NVMe SSD 500GB Samsung SSD 980, PCIe3.0 x4 / NVMe1.4, M2 Type 2280 form factor, Seq. Read: 3100 MB/s, Seq. Write: 2600 MB/s, Max Random 4k: Read /Write: 400K/470K IOPS, Samsung Pablo Controller, 512MB LPDDR4, V-NAND 3-bit MLCM.2 NVMe SSD 500GB Samsung SSD 980, PCIe3.0 x4 / NVMe1.4, M2 Type 2280 form factor, Seq. Read: 3100 MB/s, Seq. Write: 2600 MB/s, Max Random 4k: Read /Write: 400K/470K IOPS, Samsung Pablo Controller, 512MB LPDDR4, V-NAND 3-bit MLC
- M.2 NVMe SSD 1.0TB Kingston SNV2S, PCIe 4.0 x4 NVMe/ M2 Type 2280 ,up To Read:3500 MB/s, Write:2100 MB/s, SNV2S/1000GM.2 NVMe SSD 1.0TB Kingston SNV2S, PCIe 4.0 x4 NVMe/ M2 Type 2280 ,up To Read:3500 MB/s, Write:2100 MB/s, SNV2S/1000G Формфактор SSD M.2 Объем 1 Tб Интерфейс PCI Express 4.0 x4 Скорость чтения 3500 МБ/с Скорость записи 2100 МБ/с Тип ячеек памяти 3D NAND (QLC )
- M.2 NVMe SSD 500GB Corsair MP600 PRO NH, Interface: PCIe4.0 x4 / NVMe1.4, M2 Type 2280 form factor, Sequential Reads 6600 MB/s / Writes 3600 MB/s, Random Read / Write IOPS - 450K / 880K, Phison PS5018-E18, 512MB DDR4 DRAM, AES 256-bit Encryption, SSD SmarM.2 NVMe SSD 500GB Corsair MP600 PRO NH, Interface: PCIe4.0 x4 / NVMe1.4, M2 Type 2280 form factor, Sequential Reads 6600 MB/s / Writes 3600 MB/s, Random Read / Write IOPS - 450K / 880K, Phison PS5018-E18, 512MB DDR4 DRAM, AES 256-bit Encryption, SSD Smar
- M.2 NVMe SSD 500GB Kingston KC3000, w/HeatSpreader, PCIe4.0 x4 / NVMe, M2 Type 2280 form factor, Sequential Reads 7000 MB/s, Sequential Writes 3900 MB/s, Max Random 4k Read 450,000 / Write 900,000 IOPS, Phison E18 controller, 400TBW, 3D NAND TLCM.2 NVMe SSD 500GB Kingston KC3000, w/HeatSpreader, PCIe4.0 x4 / NVMe, M2 Type 2280 form factor, Sequential Reads 7000 MB/s, Sequential Writes 3900 MB/s, Max Random 4k Read 450,000 / Write 900,000 IOPS, Phison E18 controller, 400TBW, 3D NAND TLC Объем 500GB Форм-фактор M.2 Интерфейс подключения PCI Express 4.0 x4
- M.2 NVMe SSD 500GB Corsair MP600 PRO LPX, w/Heatsink, Interface: PCIe4.0 x4 / NVMe1.4, M2 Type 2280 form factor, Sequential Reads 7100 MB/s / Writes 3700 MB/s, Random Read / Write IOPS - 435K / 615K, Phison PS5018-E18, 512MB DRAM, AES 256-bit Encryption, M.2 NVMe SSD 500GB Corsair MP600 PRO LPX, w/Heatsink, Interface: PCIe4.0 x4 / NVMe1.4, M2 Type 2280 form factor, Sequential Reads 7100 MB/s / Writes 3700 MB/s, Random Read / Write IOPS - 435K / 615K, Phison PS5018-E18, 512MB DRAM, AES 256-bit Encryption,
- M.2 NVMe SSD 500GB Kingston Fury Renegade, w/HeatSpreader, PCIe4.0 x4 / NVMe, M2 Type 2280 form factor, Sequential Reads 7300 MB/s, Sequential Writes 3900 MB/s, Max Random 4k Read 450,000 / Write 900,000 IOPS, Phison E18 controller, 500TBW, 3D NAND TLCM.2 NVMe SSD 500GB Kingston Fury Renegade, w/HeatSpreader, PCIe4.0 x4 / NVMe, M2 Type 2280 form factor, Sequential Reads 7300 MB/s, Sequential Writes 3900 MB/s, Max Random 4k Read 450,000 / Write 900,000 IOPS, Phison E18 controller, 500TBW, 3D NAND TLC Объем: 500 ГБ Форм-фактор: M.2 Интерфейс подключения: PCI Express
- M.2 NVMe SSD 1.0TB GOODRAM PX600 Gen2, Interface: PCIe4.0 x4 / NVMe1.4, M2 Type 2280 form factor, Sequential Reads/Writes 5000 MB/s / 3200 MB/s, TBW: 300TB, MTBF: 2mln hours, 3D NAND TLC, heat-dissipating thermal padM.2 NVMe SSD 1.0TB GOODRAM PX600 Gen2, Interface: PCIe4.0 x4 / NVMe1.4, M2 Type 2280 form factor, Sequential Reads/Writes 5000 MB/s / 3200 MB/s, TBW: 300TB, MTBF: 2mln hours, 3D NAND TLC, heat-dissipating thermal pad Объём накопителя: 1000 ГБ Тип ячеек памяти 3D NAND TLC Максимальная скорость записи, мб/с 3200 Ма
- M.2 NVMe SSD 1.0TB Samsung 980 , PCIe3.0 x4 / NVMe1.3, M2 Type 2280, Read: 3500 MB/s, Write: 2300 MB/s, Read /Write: 250,000/550,000 IOPS, Controller Samsung Phoenix, 3D TLC (V-NAND)M.2 NVMe SSD 1.0TB Samsung 980 , PCIe3.0 x4 / NVMe1.3, M2 Type 2280, Read: 3500 MB/s, Write: 2300 MB/s, Read /Write: 250,000/550,000 IOPS, Controller Samsung Phoenix, 3D TLC (V-NAND) форм-фактор: 2280, M емкость: 1000 ГБ скорость чтения/записи: 3500 МБ/с / 3000 МБ/с интерфейс подключения: M.2, PCI-E 3.0 x4 тип флэш-
- M.2 NVMe SSD 500GB Kingston Fury Renegade, w/Aluminum Heatsink, PCIe4.0 x4 / NVMe, M2 Type 2280 form factor, Sequential Reads 7300 MB/s, Sequential Writes 3900 MB/s, Max Random 4k Read 450,000 / Write 900,000 IOPS, Phison E18 controller, 500TBW, 3D NAND TM.2 NVMe SSD 500GB Kingston Fury Renegade, w/Aluminum Heatsink, PCIe4.0 x4 / NVMe, M2 Type 2280 form factor, Sequential Reads 7300 MB/s, Sequential Writes 3900 MB/s, Max Random 4k Read 450,000 / Write 900,000 IOPS, Phison E18 controller, 500TBW, 3D NAND T Объём накопителя 500 ГБ Тип ячеек памяти 3D NAND TLC Максим
- M.2 NVMe SSD 1.0TB GOODRAM IRDM PRO SLIM, Interface: PCIe4.0 x4 / NVMe1.4, M2 Type 2280 form factor, Sequential Reads/Writes 7000 MB/s / 5500 MB/s, Random 4K Reads/Writes: 350K IOPS / 700K IOPS, TBW: 700TB, MTBF: 2mln hours, Phison E18 with DRAM Buffer, PM.2 NVMe SSD 1.0TB GOODRAM IRDM PRO SLIM, Interface: PCIe4.0 x4 / NVMe1.4, M2 Type 2280 form factor, Sequential Reads/Writes 7000 MB/s / 5500 MB/s, Random 4K Reads/Writes: 350K IOPS / 700K IOPS, TBW: 700TB, MTBF: 2mln hours, Phison E18 with DRAM Buffer Объём накопителя: 1000 ГБ Тип ячеек памяти 3D NAND TLC Максима
- M.2 NVMe SSD 1.0TB Kingston KC3000, w/HeatSpreader, PCIe4.0 x4 / NVMe, M2 Type 2280 form factor, Sequential Reads 7000 MB/s, Sequential Writes 6000 MB/s, Max Random 4k Read 900,000 / Write 1000,000 IOPS, Phison E18 controller, 800TBW, 3D NAND TLCM.2 NVMe SSD 1.0TB Kingston KC3000, w/HeatSpreader, PCIe4.0 x4 / NVMe, M2 Type 2280 form factor, Sequential Reads 7000 MB/s, Sequential Writes 6000 MB/s, Max Random 4k Read 900,000 / Write 1000,000 IOPS, Phison E18 controller, 800TBW, 3D NAND TLC Объем 1 ТБ Форм-фактор M.2 Интерфейс подключения PCI Express 4.0 x4
- M.2 NVMe SSD 1.0TB Kingston Fury Renegade, w/HeatSpreader, PCIe4.0 x4 / NVMe, M2 Type 2280 form factor, Sequential Reads 7300 MB/s, Sequential Writes 6000 MB/s, Max Random 4k Read 900,000 / Write 1000,000 IOPS, Phison E18 controller, 1000TBW, 3D NAND TLCM.2 NVMe SSD 1.0TB Kingston Fury Renegade, w/HeatSpreader, PCIe4.0 x4 / NVMe, M2 Type 2280 form factor, Sequential Reads 7300 MB/s, Sequential Writes 6000 MB/s, Max Random 4k Read 900,000 / Write 1000,000 IOPS, Phison E18 controller, 1000TBW, 3D NAND TLC Название Накопитель SSD 1.0TB Kingston Fury Renegade M.2 2280 P
- M.2 NVMe SSD 2.0TB Verbatim Vi3000, Interface: PCIe3.0 x4 / NVMe 1.3, M2 Type 2280 form factor, Sequential Read 3300 MB/s, Sequential Write 3300 MB/s, Random Read 150K IOPS, Random Write 100K IOPS, Phison E13T, TBW: 1500TB, 3D NAND TLCM.2 NVMe SSD 2.0TB Verbatim Vi3000, Interface: PCIe3.0 x4 / NVMe 1.3, M2 Type 2280 form factor, Sequential Read 3300 MB/s, Sequential Write 3300 MB/s, Random Read 150K IOPS, Random Write 100K IOPS, Phison E13T, TBW: 1500TB, 3D NAND TLC Общий объем памяти 2 ТБ Количество бит на ячейку 3 бит TLC Структура памяти 3D NAN
- M.2 NVMe SSD 2.0TB GOODRAM PX600 Gen2, Interface: PCIe4.0 x4 / NVMe1.4, M2 Type 2280 form factor, Sequential Reads/Writes 5000 MB/s / 4200 MB/s, TBW: 600TB, MTBF: 2mln hours, 3D NAND TLC, heat-dissipating thermal padM.2 NVMe SSD 2.0TB GOODRAM PX600 Gen2, Interface: PCIe4.0 x4 / NVMe1.4, M2 Type 2280 form factor, Sequential Reads/Writes 5000 MB/s / 4200 MB/s, TBW: 600TB, MTBF: 2mln hours, 3D NAND TLC, heat-dissipating thermal pad Объём накопителя: 2000 ГБ Тип ячеек памяти 3D NAND TLC Максимальная скорость записи, мб/с 4200 Ма