GoodRam
(16)- 2.5" SSD 256GB GOODRAM CX400 Gen.2, SATAIII, Read: 550 MB/s, Write: 480 MB/s, 3D NAND TLC SSDPR-CX400-256-G22.5" SSD 256GB GOODRAM CX400 Gen.2, SATAIII, Read: 550 MB/s, Write: 480 MB/s, 3D NAND TLC SSDPR-CX400-256-G2 Категория:SSD Производитель:GOODRAM Part Number:SSDPR-CX400-256-G2 Модель:CX400 Gen.2 Форм-фактор:2.5" Емкость накопителя:256 ГБ Скорость чтения:550 МБ/с Скорость записи:480 МБ/с Скорость произвольного чтен
- 2.5" SSD 240GB GOODRAM CL100 Gen.3, SATAIII, Sequential Reads: 520 MB/s, Sequential Writes: 400 MB/s, Thickness- 7mm, Controller Marvell 88NV1120, 3D NAND TLC2.5" SSD 240GB GOODRAM CL100 Gen.3, SATAIII, Sequential Reads: 520 MB/s, Sequential Writes: 400 MB/s, Thickness- 7mm, Controller Marvell 88NV1120, 3D NAND TLC Категория SSD Производитель GOODRAM Форм-фактор 2.5" Емкость накопителя 240 GB Скорость чтения 520 MB/s Скорость записи 400 MB/s Тип ячеек памяти TLC Контролл
- 2.5" SSD 480GB GOODRAM CL100 Gen.3, SATAIII, Read: 540 MB/s, Write: 460 MB/s, 3D NAND TLC SSDPR-CL100-480-G32.5" SSD 480GB GOODRAM CL100 Gen.3, SATAIII, Read: 540 MB/s, Write: 460 MB/s, 3D NAND TLC SSDPR-CL100-480-G3 Категория:SSD Производитель:GOODRAM Part Number:SSDPR-CL100-480-G3 Модель:CL100 Gen.3 Форм-фактор:2.5" Емкость накопителя:480 ГБ Скорость чтения:540 МБ/с Скорость записи:460 МБ/с Тип ячеек памяти:TLC Контро
- 2.5" SSD 120GB GOODRAM CL100 Gen.3, SATAIII, Read: 485 MB/s, Writes: 380 MB/s, 7mm, Controller Marvell 88NV1120, NAND TLC2.5" SSD 120GB GOODRAM CL100 Gen.3, SATAIII, Read: 485 MB/s, Writes: 380 MB/s, 7mm, Controller Marvell 88NV1120, NAND TLC Объем 120 ГБ Формфактор 2.5" Интерфейс SATAIII
- 2.5" SSD 120GB GOODRAM CL100 Gen.3, SATAIII, Sequential Reads: 485 MB/s, Sequential Writes: 380 MB/s, Thickness- 7mm, Controller Marvell 88NV1120, 3D NAND TLC2.5" SSD 120GB GOODRAM CL100 Gen.3, SATAIII, Sequential Reads: 485 MB/s, Sequential Writes: 380 MB/s, Thickness- 7mm, Controller Marvell 88NV1120, 3D NAND TLC Объем 120 ГБ Формфактор 2.5" Интерфейс SATAIII
- 2.5" SSD 128GB GOODRAM CX400 Gen.2, SATAIII, Read: 550 MB/s, Write: 480 MB/s, 3D NAND TLC SSDPR-CX400-128-G22.5" SSD 128GB GOODRAM CX400 Gen.2, SATAIII, Read: 550 MB/s, Write: 480 MB/s, 3D NAND TLC SSDPR-CX400-128-G2 Формфактор 2.5" Объем 128 Гб Интерфейс SATA III Скорость чтения 550 МБ/с Скорость записи 480 МБ/с Тип ячеек памяти 3D V-NAND (TLC) Энергопотребление В режиме чтения: 2.3 Вт, В режиме записи: 4.3 Вт, В режим
- 2.5" SSD 128GB GOODRAM CX400 Gen.2, SATAIII, Sequential Reads: 550 MB/s, Sequential Writes: 460 MB/s, Maximum Random 4k: Read: 65,000 IOPS / Write: 82,500 IOPS, Thickness- 7mm, Controller Phison PS3111-S11, 3D NAND TLC2.5" SSD 128GB GOODRAM CX400 Gen.2, SATAIII, Sequential Reads: 550 MB/s, Sequential Writes: 460 MB/s, Maximum Random 4k: Read: 65,000 IOPS / Write: 82,500 IOPS, Thickness- 7mm, Controller Phison PS3111-S11, 3D NAND TLC Объём накопителя 128 ГБ Тип ячеек памяти 3D NAND TLC Максимальная скорость записи 460 МБ/сек Ма
- 2.5" SSD 240GB GOODRAM CL100 Gen.3, SATAIII, Read: 520 MB/s, Writes: 400 MB/s, 7mm, Controller Marvell 88NV1120, NAND TLC 3D2.5" SSD 240GB GOODRAM CL100 Gen.3, SATAIII, Read: 520 MB/s, Writes: 400 MB/s, 7mm, Controller Marvell 88NV1120, NAND TLC 3D Модель Goodram CL100 gen.3 Основной цвет черный Объем накопителя 240 ГБ Физический интерфейс SATA III Тип чипов памяти TLC 3D NAND NVMe нет Максимальная скорость записи (сжатые данные) 40
- 2.5" SSD 256GB GOODRAM CX400 Gen.2, SATAIII, Sequential Reads: 550 MB/s, Sequential Writes: 480 MB/s, Maximum Random 4k: Read: 65,000 IOPS / Write: 61,440 IOPS, Thickness- 7mm, Controller Phison PS3111-S11, 3D NAND TLC2.5" SSD 256GB GOODRAM CX400 Gen.2, SATAIII, Sequential Reads: 550 MB/s, Sequential Writes: 480 MB/s, Maximum Random 4k: Read: 65,000 IOPS / Write: 61,440 IOPS, Thickness- 7mm, Controller Phison PS3111-S11, 3D NAND TLC Объем 256 ГБ Формфактор 2.5" Интерфейс SATAIII
- M.2 NVMe SSD 250GB GOODRAM PX600 Gen2, Interface: PCIe4.0 x4 / NVMe1.4, M2 Type 2280 form factor, Sequential Reads/Writes 3200 MB/s / 1700 MB/s, TBW: 100TB, MTBF: 2mln hours, 3D NAND TLC, heat-dissipating thermal padM.2 NVMe SSD 250GB GOODRAM PX600 Gen2, Interface: PCIe4.0 x4 / NVMe1.4, M2 Type 2280 form factor, Sequential Reads/Writes 3200 MB/s / 1700 MB/s, TBW: 100TB, MTBF: 2mln hours, 3D NAND TLC, heat-dissipating thermal pad Объём накопителя: 250 ГБ Тип ячеек памяти 3D NAND TLC Максимальная скорость записи, мб/с 1700 Мак
- 2.5" SSD 480GB GOODRAM CL100 Gen.3, SATAIII, Sequential Reads: 540 MB/s, Sequential Writes: 460 MB/s, Thickness- 7mm, Controller Marvell 88NV1120, 3D NAND TLC2.5" SSD 480GB GOODRAM CL100 Gen.3, SATAIII, Sequential Reads: 540 MB/s, Sequential Writes: 460 MB/s, Thickness- 7mm, Controller Marvell 88NV1120, 3D NAND TLC Объём накопителя, ГБ 480 Максимальная скорость записи, Мбайт/с 460 Максимальная скорость чтения, Мбайт/с 540
- 2.5" SSD 512GB GOODRAM CX400 Gen.2, SATAIII, Sequential Reads: 550 MB/s, Sequential Writes: 500 MB/s, Maximum Random 4k: Read: 75,500 IOPS / Write: 76,800 IOPS, Thickness- 7mm, Controller Phison PS3111-S11, 3D NAND TLC2.5" SSD 512GB GOODRAM CX400 Gen.2, SATAIII, Sequential Reads: 550 MB/s, Sequential Writes: 500 MB/s, Maximum Random 4k: Read: 75,500 IOPS / Write: 76,800 IOPS, Thickness- 7mm, Controller Phison PS3111-S11, 3D NAND TLC Объем 512 ГБ Скорость чтения 550 МБ/с Скорость записи 500 МБ/с Энергопотребление В режиме чтения:
- M.2 NVMe SSD 256GB GOODRAM IRDM, Interface: PCIe3.0 x4 / NVMe1.3, M2 Type 2280 form factor, Sequential Reads/Writes 3000 MB/s/ 1000 MB/s, Random 4K Read/Write 149K IOPS/ 250K IOPS, 8-Channel Phison E12 w/DRAM buffer, 3D NAND TLCM.2 NVMe SSD 256GB GOODRAM IRDM, Interface: PCIe3.0 x4 / NVMe1.3, M2 Type 2280 form factor, Sequential Reads/Writes 3000 MB/s/ 1000 MB/s, Random 4K Read/Write 149K IOPS/ 250K IOPS, 8-Channel Phison E12 w/DRAM buffer, 3D NAND TLC Формфактор SSD M.2 Объем 256 Гб Интерфейс PCI Express 3.0 x4 Скорость чтения 3000 МБ/с Ск
- M.2 NVMe SSD 500GB GOODRAM PX600 Gen2, Interface: PCIe4.0 x4 / NVMe1.4, M2 Type 2280 form factor, Sequential Reads/Writes 4700 MB/s / 1700 MB/s, TBW: 160TB, MTBF: 2mln hours, 3D NAND TLC, heat-dissipating thermal padM.2 NVMe SSD 500GB GOODRAM PX600 Gen2, Interface: PCIe4.0 x4 / NVMe1.4, M2 Type 2280 form factor, Sequential Reads/Writes 4700 MB/s / 1700 MB/s, TBW: 160TB, MTBF: 2mln hours, 3D NAND TLC, heat-dissipating thermal pad Объём накопителя: 500 ГБ Тип ячеек памяти 3D NAND TLC Максимальная скорость записи, мб/с 1700 Мак
- M.2 NVMe SSD 1.0TB GOODRAM PX600 Gen2, Interface: PCIe4.0 x4 / NVMe1.4, M2 Type 2280 form factor, Sequential Reads/Writes 5000 MB/s / 3200 MB/s, TBW: 300TB, MTBF: 2mln hours, 3D NAND TLC, heat-dissipating thermal padM.2 NVMe SSD 1.0TB GOODRAM PX600 Gen2, Interface: PCIe4.0 x4 / NVMe1.4, M2 Type 2280 form factor, Sequential Reads/Writes 5000 MB/s / 3200 MB/s, TBW: 300TB, MTBF: 2mln hours, 3D NAND TLC, heat-dissipating thermal pad Объём накопителя: 1000 ГБ Тип ячеек памяти 3D NAND TLC Максимальная скорость записи, мб/с 3200 Ма
- M.2 NVMe SSD 1.0TB GOODRAM IRDM PRO SLIM, Interface: PCIe4.0 x4 / NVMe1.4, M2 Type 2280 form factor, Sequential Reads/Writes 7000 MB/s / 5500 MB/s, Random 4K Reads/Writes: 350K IOPS / 700K IOPS, TBW: 700TB, MTBF: 2mln hours, Phison E18 with DRAM Buffer, PM.2 NVMe SSD 1.0TB GOODRAM IRDM PRO SLIM, Interface: PCIe4.0 x4 / NVMe1.4, M2 Type 2280 form factor, Sequential Reads/Writes 7000 MB/s / 5500 MB/s, Random 4K Reads/Writes: 350K IOPS / 700K IOPS, TBW: 700TB, MTBF: 2mln hours, Phison E18 with DRAM Buffer Объём накопителя: 1000 ГБ Тип ячеек памяти 3D NAND TLC Максима
