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(142)- M.2 NVMe SSD 128GB Patriot P300, Interface: PCIe3.0 x4 / NVMe 1.3, M2 Type 2280 form factor, Sequential Read 1600 MB/s, Sequential Write 600 MB/s, Random Read 290K IOPS, Random Write 150K IOPS, 3D NAND TLCM.2 NVMe SSD 128GB Patriot P300, Interface: PCIe3.0 x4 / NVMe 1.3, M2 Type 2280 form factor, Sequential Read 1600 MB/s, Sequential Write 600 MB/s, Random Read 290K IOPS, Random Write 150K IOPS, 3D NAND TLC Производитель: PATRIOT Тип: SSD накопитель Объем, ГБ: 128 Интерфейс: M.2 (PCI-E 3.0) Поддержка TRIM: есть Форм-ф
- M.2 NVMe SSD 256GB SK Hynix BC711, Interface: PCIe3.0 x4 / NVMe 1.3, M2 Type 2280 S3 form factor, Sequential Read 2100 MB/s, Sequential Write 1700 MB/s, Random Read 140K IOPS, Random Write 190K IOPS, 3D NAND TLC, BulkM.2 NVMe SSD 256GB SK Hynix BC711, Interface: PCIe3.0 x4 / NVMe 1.3, M2 Type 2280 S3 form factor, Sequential Read 2100 MB/s, Sequential Write 1700 MB/s, Random Read 140K IOPS, Random Write 190K IOPS, 3D NAND TLC, Bulk Объём накопителя 256 ГБ Тип ячеек памяти 3D NAND TLC Максимальная скорость записи, мб/с 1700 Мак
- M.2 NVMe SSD 256GB Patriot P300, Interface: PCIe3.0 x4 / NVMe 1.3, M2 Type 2280 form factor, Sequential Read 1700 MB/s, Sequential Write 1100 MB/s, Random Read 290K IOPS, Random Write 260K IOPS, TBW: 80TB, 3D NAND TLCM.2 NVMe SSD 256GB Patriot P300, Interface: PCIe3.0 x4 / NVMe 1.3, M2 Type 2280 form factor, Sequential Read 1700 MB/s, Sequential Write 1100 MB/s, Random Read 290K IOPS, Random Write 260K IOPS, TBW: 80TB, 3D NAND TLC Объем 256 ГБ Скорость чтения 1700 MB Скорость записи 1100 MB Форм-фактор M.2 Интерфейс подключения P
- M.2 NVMe SSD 240GB Patriot P310, Interface: PCIe3.0 x4 / NVMe 1.3, M2 Type 2280 form factor, Sequential Read 1700 MB/s, Sequential Write 1000 MB/s, Random Read 280K IOPS, Random Write 250K IOPS, 120TBW, 3D NAND TLCM.2 NVMe SSD 240GB Patriot P310, Interface: PCIe3.0 x4 / NVMe 1.3, M2 Type 2280 form factor, Sequential Read 1700 MB/s, Sequential Write 1000 MB/s, Random Read 280K IOPS, Random Write 250K IOPS, 120TBW, 3D NAND TLC Тип устройства:SSD Производитель:Patriot Модель:P310 Форм-фактор:M.2 2280 Емкость накопителя:240 ГБ Ско
- M.2 NVMe SSD 256GB GOODRAM PX500 Gen2, Interface: PCIe3.0 x4 / NVMe1.3, M2 Type 2280 form factor, Sequential Reads/Writes 1850 MB/s/ 950 MB/s, Random (4k QD64) Read/Write 102K IOPS/ 230K IOPS, SMI 2263XT, TBW: 70TB, 3D NAND TLC, heat-dissipating thermal pM.2 NVMe SSD 256GB GOODRAM PX500 Gen2, Interface: PCIe3.0 x4 / NVMe1.3, M2 Type 2280 form factor, Sequential Reads/Writes 1850 MB/s/ 950 MB/s, Random (4k QD64) Read/Write 102K IOPS/ 230K IOPS, SMI 2263XT, TBW: 70TB, 3D NAND TLC, heat-dissipating thermal Бренд GOODRAM Модель PX500 Форм-фактор накопителя M.2 NVMe Памя
- M.2 SATA SSD 256GB Verbatim Vi560 S3, SATA 6Gb/s, M.2 Type 2280 form factor, Sequential Reads: 560 MB/s, Sequential Writes: 460 MB/s, Max Random 4k: Read: 102,000 IOPS / Write: 80,000 IOPS, Phison Controller, 3D NAND TLCM.2 SATA SSD 256GB Verbatim Vi560 S3, SATA 6Gb/s, M.2 Type 2280 form factor, Sequential Reads: 560 MB/s, Sequential Writes: 460 MB/s, Max Random 4k: Read: 102,000 IOPS / Write: 80,000 IOPS, Phison Controller, 3D NAND TLC Форм-фактор: M.2 2280 Основной интерфейс: интерфейс Serial ATA со скоростью передачи данных 6 Гб
- M.2 NVMe SSD 250GB GOODRAM PX600 Gen2, Interface: PCIe4.0 x4 / NVMe1.4, M2 Type 2280 form factor, Sequential Reads/Writes 3200 MB/s / 1700 MB/s, TBW: 100TB, MTBF: 2mln hours, 3D NAND TLC, heat-dissipating thermal padM.2 NVMe SSD 250GB GOODRAM PX600 Gen2, Interface: PCIe4.0 x4 / NVMe1.4, M2 Type 2280 form factor, Sequential Reads/Writes 3200 MB/s / 1700 MB/s, TBW: 100TB, MTBF: 2mln hours, 3D NAND TLC, heat-dissipating thermal pad Объём накопителя: 250 ГБ Тип ячеек памяти 3D NAND TLC Максимальная скорость записи, мб/с 1700 Мак
- M.2 NVMe SSD 256GB Verbatim Vi3000, Interface: PCIe3.0 x4 / NVMe 1.3, M2 Type 2280 form factor, Sequential Read 3300 MB/s, Sequential Write 1300 MB/s, Random Read 100K IOPS, Random Write 100K IOPS, Phison E13T, TBW: 185TB, 3D NAND TLCM.2 NVMe SSD 256GB Verbatim Vi3000, Interface: PCIe3.0 x4 / NVMe 1.3, M2 Type 2280 form factor, Sequential Read 3300 MB/s, Sequential Write 1300 MB/s, Random Read 100K IOPS, Random Write 100K IOPS, Phison E13T, TBW: 185TB, 3D NAND TLC Формфактор: M.2 Объем SSD: 256 ГБ Скорость чтения: 3300 МБ/с Скорость записи: 1300
- M.2 NVMe SSD 250GB Patriot P400 Lite, w/Graphene Heatshield, Interface: PCIe4.0 x4 / NVMe 1.4, M2 Type 2280 form factor, Sequential Read 3200 MB/s, Sequential Write 1300 MB/s, Random Read 110K IOPS, Random Write 300K IOPS, EtE data path protection, TBW: 1M.2 NVMe SSD 250GB Patriot P400 Lite, w/Graphene Heatshield, Interface: PCIe4.0 x4 / NVMe 1.4, M2 Type 2280 form factor, Sequential Read 3200 MB/s, Sequential Write 1300 MB/s, Random Read 110K IOPS, Random Write 300K IOPS, EtE data path protection Объём накопителя: 250 ГБ Тип ячеек памяти 3D NAND TLC Максимальная
- M.2 NVMe SSD 256GB GOODRAM IRDM, Interface: PCIe3.0 x4 / NVMe1.3, M2 Type 2280 form factor, Sequential Reads/Writes 3000 MB/s/ 1000 MB/s, Random 4K Read/Write 149K IOPS/ 250K IOPS, 8-Channel Phison E12 w/DRAM buffer, 3D NAND TLCM.2 NVMe SSD 256GB GOODRAM IRDM, Interface: PCIe3.0 x4 / NVMe1.3, M2 Type 2280 form factor, Sequential Reads/Writes 3000 MB/s/ 1000 MB/s, Random 4K Read/Write 149K IOPS/ 250K IOPS, 8-Channel Phison E12 w/DRAM buffer, 3D NAND TLC Формфактор SSD M.2 Объем 256 Гб Интерфейс PCI Express 3.0 x4 Скорость чтения 3000 МБ/с Ск
- M.2 NVMe SSD 480GB Patriot P310, Interface: PCIe3.0 x4 / NVMe 1.3, M2 Type 2280 form factor, Sequential Read 1700 MB/s, Sequential Write 1500 MB/s, Random Read 280K IOPS, Random Write 250K IOPS, SmartECC technology, EtE data path protection, TBW: 240TB, 3M.2 NVMe SSD 480GB Patriot P310, Interface: PCIe3.0 x4 / NVMe 1.3, M2 Type 2280 form factor, Sequential Read 1700 MB/s, Sequential Write 1500 MB/s, Random Read 280K IOPS, Random Write 250K IOPS, SmartECC technology, EtE data path protection, TBW: 240TB, 3 Объём накопителя 480 ГБ
- M.2 SATA SSD 512GB Verbatim Vi560 S3, SATA 6Gb/s, M.2 Type 2280 form factor, Sequential Reads: 560 MB/s, Sequential Writes: 520 MB/s, Max Random 4k: Read: 101,376 IOPS / Write: 80,400 IOPS, Phison Controller, 3D NAND TLCM.2 SATA SSD 512GB Verbatim Vi560 S3, SATA 6Gb/s, M.2 Type 2280 form factor, Sequential Reads: 560 MB/s, Sequential Writes: 520 MB/s, Max Random 4k: Read: 101,376 IOPS / Write: 80,400 IOPS, Phison Controller, 3D NAND TLC Объём накопителя 512 ГБ Тип ячеек памяти 3D NAND TLC
- M.2 NVMe SSD 500GB Kingston NV2, Interface: PCIe4.0 x4 / NVMe1.3, M2 Type 2280 form factor, Sequential Reads 3500 MB/s, Sequential Writes 2100 MB/s, Phison E19T controller, TBW: 160TB, 3D QLC NAND flashM.2 NVMe SSD 500GB Kingston NV2, Interface: PCIe4.0 x4 / NVMe1.3, M2 Type 2280 form factor, Sequential Reads 3500 MB/s, Sequential Writes 2100 MB/s, Phison E19T controller, TBW: 160TB, 3D QLC NAND flash Объём накопителя 500 ГБ Тип ячеек памяти QLC 3D NAND Максимальная скорость записи, мб/с 2100 Максимальная скоро
- M.2 NVMe SSD 500GB Silicon Power UD85, Interface:PCIe4.0 x4 / NVMe1.4, M2 Type 2280 form factor, Sequential Reads 3600 MB/s / Writes 2400 MB/s, MTBF 1.5mln, HMB, ECC, SLC Cache, E2E Data Protection, LDPC, Phison E21T, 3D NAND TLCM.2 NVMe SSD 500GB Silicon Power UD85, Interface:PCIe4.0 x4 / NVMe1.4, M2 Type 2280 form factor, Sequential Reads 3600 MB/s / Writes 2400 MB/s, MTBF 1.5mln, HMB, ECC, SLC Cache, E2E Data Protection, LDPC, Phison E21T, 3D NAND TLC Бренд SILICON POWER Модель UD85 Форм-фактор накопителя M.2 NVMe Память накопителя 500 ГБ
- M.2 NVMe SSD 500GB GOODRAM PX600 Gen2, Interface: PCIe4.0 x4 / NVMe1.4, M2 Type 2280 form factor, Sequential Reads/Writes 4700 MB/s / 1700 MB/s, TBW: 160TB, MTBF: 2mln hours, 3D NAND TLC, heat-dissipating thermal padM.2 NVMe SSD 500GB GOODRAM PX600 Gen2, Interface: PCIe4.0 x4 / NVMe1.4, M2 Type 2280 form factor, Sequential Reads/Writes 4700 MB/s / 1700 MB/s, TBW: 160TB, MTBF: 2mln hours, 3D NAND TLC, heat-dissipating thermal pad Объём накопителя: 500 ГБ Тип ячеек памяти 3D NAND TLC Максимальная скорость записи, мб/с 1700 Мак
- M.2 NVMe SSD 500GB Patriot P400 Lite, w/Graphene Heatshield, Interface: PCIe4.0 x4 / NVMe 1.4, M2 Type 2280 form factor, Sequential Read 3500 MB/s, Sequential Write 2400 MB/s, Random Read 220K IOPS, Random Write 500K IOPS, EtE data path protection, TBW: 2M.2 NVMe SSD 500GB Patriot P400 Lite, w/Graphene Heatshield, Interface: PCIe4.0 x4 / NVMe 1.4, M2 Type 2280 form factor, Sequential Read 3500 MB/s, Sequential Write 2400 MB/s, Random Read 220K IOPS, Random Write 500K IOPS, EtE data path protection, TBW: 2 Объём накопителя 500 ГБ Тип ячеек памяти 3D NAND TLC Максималь
- M.2 NVMe SSD 500GB MSI Spatium M450, PCIe4.0 x4 / NVMe1.4, M2 Type 2280 form factor, Seq. Read: 3600 MB/s, Seq. Write: 2300 MB/s, Max Random 4k: Read /Write: 300,000 / 550,000 IOPS, Controller Phison E19T, LDPC ECC Algorithm, E-t-E Data Protection, APST,M.2 NVMe SSD 500GB MSI Spatium M450, PCIe4.0 x4 / NVMe1.4, M2 Type 2280 form factor, Seq. Read: 3600 MB/s, Seq. Write: 2300 MB/s, Max Random 4k: Read /Write: 300,000 / 550,000 IOPS, Controller Phison E19T, LDPC ECC Algorithm, E-t-E Data Protection, APST, Объём накопителя 500 ГБ Тип ячеек памяти 3D NAND TLC Максим
- M.2 NVMe SSD 500GB Corsair MP600 GS, Interface: PCIe4.0 x4 / NVMe1.4, M2 Type 2280 form factor, Sequential Reads 4800 MB/s / Writes 3500 MB/s, Random Read / Write IOPS - 450K / 700K, Phison PS2021-E21T, AES-256 encryption, TBW - 300 TB, 176L Micron 3D TLCM.2 NVMe SSD 500GB Corsair MP600 GS, Interface: PCIe4.0 x4 / NVMe1.4, M2 Type 2280 form factor, Sequential Reads 4800 MB/s / Writes 3500 MB/s, Random Read / Write IOPS - 450K / 700K, Phison PS2021-E21T, AES-256 encryption, TBW - 300 TB, 176L Micron 3D TLC
- M.2 NVMe SSD 500GB Samsung SSD 980, PCIe3.0 x4 / NVMe1.4, M2 Type 2280 form factor, Seq. Read: 3100 MB/s, Seq. Write: 2600 MB/s, Max Random 4k: Read /Write: 400K/470K IOPS, Samsung Pablo Controller, 512MB LPDDR4, V-NAND 3-bit MLCM.2 NVMe SSD 500GB Samsung SSD 980, PCIe3.0 x4 / NVMe1.4, M2 Type 2280 form factor, Seq. Read: 3100 MB/s, Seq. Write: 2600 MB/s, Max Random 4k: Read /Write: 400K/470K IOPS, Samsung Pablo Controller, 512MB LPDDR4, V-NAND 3-bit MLC
- M.2 NVMe SSD 512GB GOODRAM IRDM, Interface: PCIe3.0 x4 / NVMe1.3, M2 Type 2280 form factor, Sequential Reads/Writes 3200 MB/s/ 2000 MB/s, Random 4K Read/Write 295K IOPS/ 500K IOPS, 8-Channel Phison E12 w/DRAM buffer, 3D NAND TLCM.2 NVMe SSD 512GB GOODRAM IRDM, Interface: PCIe3.0 x4 / NVMe1.3, M2 Type 2280 form factor, Sequential Reads/Writes 3200 MB/s/ 2000 MB/s, Random 4K Read/Write 295K IOPS/ 500K IOPS, 8-Channel Phison E12 w/DRAM buffer, 3D NAND TLC Формфактор SSD M.2 Объем 512GB Интерфейс PCI Express 3.0 x4 Тип ячеек памяти 3D V-NAND (T
- "Power Supply ATX 700W Chieftec TASK TPS-700S, 80+ Bronze, Active PFC, 120mm silent fan// Specification : ATX 12V 2.3Form factor : PS IIEfficiency : 80 PLUS® BronzeDimension (DxWxH) : 140 mm x 150 mm x 87 mmPerformanceAC Input : 100-240V / "Power Supply ATX 700W Chieftec TASK TPS-700S, 80+ Bronze, Active PFC, 120mm silent fan// Specification : ATX 12V 2.3Form factor : PS IIEfficiency : 80 PLUS® BronzeDimension (DxWxH) : 140 mm x 150 mm x 87 mmPerformanceAC Input : 100-240V / Краткие характеристики 700W 80+ Bronze ATX Мощность 700 Вт Сертификат 80 Plu
- M.2 NVMe SSD 500GB Corsair MP600 PRO NH, Interface: PCIe4.0 x4 / NVMe1.4, M2 Type 2280 form factor, Sequential Reads 6600 MB/s / Writes 3600 MB/s, Random Read / Write IOPS - 450K / 880K, Phison PS5018-E18, 512MB DDR4 DRAM, AES 256-bit Encryption, SSD SmarM.2 NVMe SSD 500GB Corsair MP600 PRO NH, Interface: PCIe4.0 x4 / NVMe1.4, M2 Type 2280 form factor, Sequential Reads 6600 MB/s / Writes 3600 MB/s, Random Read / Write IOPS - 450K / 880K, Phison PS5018-E18, 512MB DDR4 DRAM, AES 256-bit Encryption, SSD Smar
- M.2 SATA SSD 1.0TB Verbatim Vi560 S3, SATA 6Gb/s, M.2 Type 2280 form factor, Sequential Reads: 560 MB/s, Sequential Writes: 520 MB/s, Max Random 4k: Read: 102,000 IOPS / Write: 102,000 IOPS, Phison Controller, 3D NAND TLCM.2 SATA SSD 1.0TB Verbatim Vi560 S3, SATA 6Gb/s, M.2 Type 2280 form factor, Sequential Reads: 560 MB/s, Sequential Writes: 520 MB/s, Max Random 4k: Read: 102,000 IOPS / Write: 102,000 IOPS, Phison Controller, 3D NAND TLC Категория SSD Part Number VI560S3-1TB-49364 Модель Vi560 S3 Форм-Фактор M.2 2280 Скорость чтени
- M.2 NVMe SSD 500GB Corsair MP600 PRO LPX, w/Heatsink, Interface: PCIe4.0 x4 / NVMe1.4, M2 Type 2280 form factor, Sequential Reads 7100 MB/s / Writes 3700 MB/s, Random Read / Write IOPS - 435K / 615K, Phison PS5018-E18, 512MB DRAM, AES 256-bit Encryption, M.2 NVMe SSD 500GB Corsair MP600 PRO LPX, w/Heatsink, Interface: PCIe4.0 x4 / NVMe1.4, M2 Type 2280 form factor, Sequential Reads 7100 MB/s / Writes 3700 MB/s, Random Read / Write IOPS - 435K / 615K, Phison PS5018-E18, 512MB DRAM, AES 256-bit Encryption,
- M.2 NVMe SSD 500GB Kingston KC3000, w/HeatSpreader, PCIe4.0 x4 / NVMe, M2 Type 2280 form factor, Sequential Reads 7000 MB/s, Sequential Writes 3900 MB/s, Max Random 4k Read 450,000 / Write 900,000 IOPS, Phison E18 controller, 400TBW, 3D NAND TLCM.2 NVMe SSD 500GB Kingston KC3000, w/HeatSpreader, PCIe4.0 x4 / NVMe, M2 Type 2280 form factor, Sequential Reads 7000 MB/s, Sequential Writes 3900 MB/s, Max Random 4k Read 450,000 / Write 900,000 IOPS, Phison E18 controller, 400TBW, 3D NAND TLC Объем 500GB Форм-фактор M.2 Интерфейс подключения PCI Express 4.0 x4
- M.2 NVMe SSD 500GB Kingston Fury Renegade, w/HeatSpreader, PCIe4.0 x4 / NVMe, M2 Type 2280 form factor, Sequential Reads 7300 MB/s, Sequential Writes 3900 MB/s, Max Random 4k Read 450,000 / Write 900,000 IOPS, Phison E18 controller, 500TBW, 3D NAND TLCM.2 NVMe SSD 500GB Kingston Fury Renegade, w/HeatSpreader, PCIe4.0 x4 / NVMe, M2 Type 2280 form factor, Sequential Reads 7300 MB/s, Sequential Writes 3900 MB/s, Max Random 4k Read 450,000 / Write 900,000 IOPS, Phison E18 controller, 500TBW, 3D NAND TLC Объем: 500 ГБ Форм-фактор: M.2 Интерфейс подключения: PCI Express
- M.2 NVMe SSD 500GB Samsung SSD 970 EVO Plus, Interface: PCIe3.0 x4 / NVMe1.3, M2 Type 2280 form factor, Seq. Read: 3500 MB/s, Seq. Write: 3200 MB/s, Max Random 4k: Read /Write: 480,000/550,000 IOPS, Samsung Phoenix controller, 3D TLC (V-NAND)M.2 NVMe SSD 500GB Samsung SSD 970 EVO Plus, Interface: PCIe3.0 x4 / NVMe1.3, M2 Type 2280 form factor, Seq. Read: 3500 MB/s, Seq. Write: 3200 MB/s, Max Random 4k: Read /Write: 480,000/550,000 IOPS, Samsung Phoenix controller, 3D TLC (V-NAND) Объём накопителя, ГБ 500 Максимальная скорость записи, Мбайт/с 3200 Максим
- M.2 NVMe SSD 1.0TB Verbatim Vi3000, Interface: PCIe3.0 x4 / NVMe 1.3, M2 Type 2280 form factor, Sequential Read 3300 MB/s, Sequential Write 3300 MB/s, Random Read 150K IOPS, Random Write 100K IOPS, Phison E13T, TBW: 750TB, 3D NAND TLCM.2 NVMe SSD 1.0TB Verbatim Vi3000, Interface: PCIe3.0 x4 / NVMe 1.3, M2 Type 2280 form factor, Sequential Read 3300 MB/s, Sequential Write 3300 MB/s, Random Read 150K IOPS, Random Write 100K IOPS, Phison E13T, TBW: 750TB, 3D NAND TLC Форм-фактор: M.2 Основной интерфейс: PCI Express 3-го поколения, X4 линии на один п
- M.2 NVMe SSD 1.0TB Lexar NM710, Interface: PCIe4.0 x4 / NVMe1.4, M2 Type 2280 form factor, Sequential Reads/Writes 5000 MB/s/ 4500 MB/s, Random Read/Write 500K IOPS/ 600K IOPS, MAP1602A-F1C, LDPC, HMB 3.0 and SLC Cache technology, TBW: 600TBW, MTBF: 1.5mlM.2 NVMe SSD 1.0TB Lexar NM710, Interface: PCIe4.0 x4 / NVMe1.4, M2 Type 2280 form factor, Sequential Reads/Writes 5000 MB/s/ 4500 MB/s, Random Read/Write 500K IOPS/ 600K IOPS, MAP1602A-F1C, LDPC, HMB 3.0 and SLC Cache technology, TBW: 600TBW, MTBF: 1.5ml Объём накопителя 1000 ГБ Максимальная скорость записи, мб/с 4
- M.2 NVMe SSD 960GB Patriot P310, Interface: PCIe3.0 x4 / NVMe 1.3, M2 Type 2280 form factor, Sequential Read 2100 MB/s, Sequential Write 1800 MB/s, Random Read 280K IOPS, Random Write 250K IOPS, SmartECC technology, EtE data path protection, TBW: 480TB, 3M.2 NVMe SSD 960GB Patriot P310, Interface: PCIe3.0 x4 / NVMe 1.3, M2 Type 2280 form factor, Sequential Read 2100 MB/s, Sequential Write 1800 MB/s, Random Read 280K IOPS, Random Write 250K IOPS, SmartECC technology, EtE data path protection, TBW: 480TB Объём накопителя 960 ГБ Тип ячеек памяти 3D NAND TLC Максималь