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(9)- 2.5" SSD 2.0TB Samsung SSD 870 QVO, SATAIII, Sequential Reads: 560 MB/s, Sequential Writes: 530 MB/s, Max Random 4k: Read: 98,000 IOPS / Write: 88,000 IOPS, 7mm, Cache 2GB LPDDR4, Samsung MKX controller, V-NAND 4bit MLC2.5" SSD 2.0TB Samsung SSD 870 QVO, SATAIII, Sequential Reads: 560 MB/s, Sequential Writes: 530 MB/s, Max Random 4k: Read: 98,000 IOPS / Write: 88,000 IOPS, 7mm, Cache 2GB LPDDR4, Samsung MKX controller, V-NAND 4bit MLC Категория:SSD Производитель:SAMSUNG Модель:870 QVO Форм-фактор:2.5" Емкость накопителя:2 ТБ Скоро
- 2.5" SSD 128GB Verbatim VI550 S3, SATAIII, Sequential Reads: 560 MB/s, Sequential Writes: 430 MB/s, Maximum Random 4k: Read: 61,000 IOPS / Write: 81,000 IOPS, Thickness- 7mm, Controller Phison PS3111, 3D NAND TLC2.5" SSD 128GB Verbatim VI550 S3, SATAIII, Sequential Reads: 560 MB/s, Sequential Writes: 430 MB/s, Maximum Random 4k: Read: 61,000 IOPS / Write: 81,000 IOPS, Thickness- 7mm, Controller Phison PS3111, 3D NAND TLC Производитель изделия Verbatim Модель 2.5" SSD 128GB Verbatim VI550 S3 Формат жесткого диска 2,5 Интерф
- 2.5" SSD 256GB GOODRAM IRDM PRO GEN.2, SATAIII, Sequential Reads: 555 MB/s, Sequential Writes: 535 MB/s, Maximum Random 4k: Read: 96,000 IOPS / Write: 81,000 IOPS, Thickness- 7mm, Controller 8Channel Phison PS3112-S12, DRAM DDR3L cache, 3D NAND TLC2.5" SSD 256GB GOODRAM IRDM PRO GEN.2, SATAIII, Sequential Reads: 555 MB/s, Sequential Writes: 535 MB/s, Maximum Random 4k: Read: 96,000 IOPS / Write: 81,000 IOPS, Thickness- 7mm, Controller 8Channel Phison PS3112-S12, DRAM DDR3L cache, 3D NAND TLC Модель IRDM PRO GEN.2 IRP-SSDPR-S25C-256 Форм-фактор накопителя 2,5"
- 2.5" SSD 250GB Samsung SSD 870 EVO, SATAIII, Sequential Reads: 560 MB/s, Sequential Writes: 530 MB/s, Max Random 4k: Read: 98,000 IOPS / Write: 88,000 IOPS, 7mm, 512MB Cache, Samsung MKX controller, V-NAND 3bit MLC2.5" SSD 250GB Samsung SSD 870 EVO, SATAIII, Sequential Reads: 560 MB/s, Sequential Writes: 530 MB/s, Max Random 4k: Read: 98,000 IOPS / Write: 88,000 IOPS, 7mm, 512MB Cache, Samsung MKX controller, V-NAND 3bit MLC Объём накопителя 250 ГБ Тип ячеек памяти MLC
- 2.5" SSD 500GB Samsung SSD 870 EVO, SATAIII, Sequential Reads: 560 MB/s, Sequential Writes: 530 MB/s, Max Random 4k: Read: 98,000 IOPS / Write: 88,000 IOPS, 7mm, 512MB Cache, Samsung MKX controller, V-NAND 3bit MLC2.5" SSD 500GB Samsung SSD 870 EVO, SATAIII, Sequential Reads: 560 MB/s, Sequential Writes: 530 MB/s, Max Random 4k: Read: 98,000 IOPS / Write: 88,000 IOPS, 7mm, 512MB Cache, Samsung MKX controller, V-NAND 3bit MLC Объём накопителя 500 ГБ Тип ячеек памяти MLC V-NAND
- 2.5" SSD 500GB Samsung SSD 870 EVO, SATAIII, Sequential Reads: 560 MB/s, Sequential Writes: 530 MB/s, Max Random 4k: Read: 98,000 IOPS / Write: 88,000 IOPS, 7mm, 512MB LPDDR4 Cache, Samsung MKX controller, V-NAND 3bit MLC2.5" SSD 500GB Samsung SSD 870 EVO, SATAIII, Sequential Reads: 560 MB/s, Sequential Writes: 530 MB/s, Max Random 4k: Read: 98,000 IOPS / Write: 88,000 IOPS, 7mm, 512MB LPDDR4 Cache, Samsung MKX controller, V-NAND 3bit MLC Объём накопителя 500 ГБ Тип ячеек памяти MLC V-NAND
- 2.5" SSD 1.0TB Samsung SSD 870 QVO, SATAIII, Sequential Reads: 560 MB/s, Sequential Writes: 530 MB/s, Max Random 4k: Read: 98,000 IOPS / Write: 88,000 IOPS, 7mm, Cache 1GB LPDDR4, Samsung MKX controller, V-NAND 4bit MLC2.5" SSD 1.0TB Samsung SSD 870 QVO, SATAIII, Sequential Reads: 560 MB/s, Sequential Writes: 530 MB/s, Max Random 4k: Read: 98,000 IOPS / Write: 88,000 IOPS, 7mm, Cache 1GB LPDDR4, Samsung MKX controller, V-NAND 4bit MLC Формфактор 2.5" Объем 1 Tб Интерфейс SATA III Скорость чтения 560 МБ/с Скорость записи 530 МБ/с Т
- 2.5" SSD 1.0TB Samsung SSD 870 EVO, SATAIII, Sequential Reads: 560 MB/s, Sequential Writes: 530 MB/s, Max Random 4k: Read: 98,000 IOPS / Write: 88,000 IOPS, 7mm, 1GB LPDDR4 Cache, Samsung MKX controller, V-NAND 3bit MLC2.5" SSD 1.0TB Samsung SSD 870 EVO, SATAIII, Sequential Reads: 560 MB/s, Sequential Writes: 530 MB/s, Max Random 4k: Read: 98,000 IOPS / Write: 88,000 IOPS, 7mm, 1GB LPDDR4 Cache, Samsung MKX controller, V-NAND 3bit MLC Объём накопителя 1 ТБ Тип ячеек памяти MLC V-NAND
- 2.5" SSD 4.0TB Samsung SSD 870 QVO, SATAIII, Sequential Reads: 560 MB/s, Sequential Writes: 530 MB/s, Max Random 4k: Read: 98,000 IOPS / Write: 88,000 IOPS, 7mm, Cache 4GB LPDDR4, Samsung MKX controller, V-NAND 4bit MLC2.5" SSD 4.0TB Samsung SSD 870 QVO, SATAIII, Sequential Reads: 560 MB/s, Sequential Writes: 530 MB/s, Max Random 4k: Read: 98,000 IOPS / Write: 88,000 IOPS, 7mm, Cache 4GB LPDDR4, Samsung MKX controller, V-NAND 4bit MLC форм-фактор: 2.5" емкость: 4000 ГБ скорость чтения/записи: 560 МБ/с / 530 МБ/с интерфейс подключе