'Samsung'
(70)- M.2 NVMe SSD 1.0TB Samsung SSD 970 EVO Plus, Interface: PCIe3.0 x4 / NVMe1.3, M2 Type 2280 form factor, Seq. Read: 3500 MB/s, Seq. Write: 3300 MB/s, Max Random 4k: Read /Write: 600,000/550,000 IOPS, Samsung Phoenix controller, 3D TLC (V-NAND)M.2 NVMe SSD 1.0TB Samsung SSD 970 EVO Plus, Interface: PCIe3.0 x4 / NVMe1.3, M2 Type 2280 form factor, Seq. Read: 3500 MB/s, Seq. Write: 3300 MB/s, Max Random 4k: Read /Write: 600,000/550,000 IOPS, Samsung Phoenix controller, 3D TLC (V-NAND) SSD накопитель, который предлагает большее Твердотельные накопители (SSD)
- M.2 NVMe SSD 500GB Samsung SSD 980 PRO, PCIe4.0 x4 / NVMe1.3c, M2 Type 2280 form factor, Seq. Read: 6900 MB/s, Seq. Write: 5000 MB/s, Max Random 4k: Read /Write: 800,000/1000,000 IOPS, Samsung Elpis Controller, 512MB LPDDR4, V-NAND 3-bit MLCM.2 NVMe SSD 500GB Samsung SSD 980 PRO, PCIe4.0 x4 / NVMe1.3c, M2 Type 2280 form factor, Seq. Read: 6900 MB/s, Seq. Write: 5000 MB/s, Max Random 4k: Read /Write: 800,000/1000,000 IOPS, Samsung Elpis Controller, 512MB LPDDR4, V-NAND 3-bit MLC Показатели работы SSD следующего поколения Освободите мощность Samsung 980
- 2.5" SSD 2.0TB Samsung SSD 870 QVO, SATAIII, Sequential Reads: 560 MB/s, Sequential Writes: 530 MB/s, Max Random 4k: Read: 98,000 IOPS / Write: 88,000 IOPS, 7mm, Cache 2GB LPDDR4, Samsung MKX controller, V-NAND 4bit MLC2.5" SSD 2.0TB Samsung SSD 870 QVO, SATAIII, Sequential Reads: 560 MB/s, Sequential Writes: 530 MB/s, Max Random 4k: Read: 98,000 IOPS / Write: 88,000 IOPS, 7mm, Cache 2GB LPDDR4, Samsung MKX controller, V-NAND 4bit MLC Категория:SSD Производитель:SAMSUNG Модель:870 QVO Форм-фактор:2.5" Емкость накопителя:2 ТБ Скоро
- M.2 NVMe SSD 500GB Samsung 980 , PCIe3.0 x4 / NVMe1.3, M2 Type 2280, Read: 3500 MB/s, Write: 2300 MB/s, Read /Write: 250,000/550,000 IOPS, Controller Samsung Phoenix, 3D TLC (V-NAND)M.2 NVMe SSD 500GB Samsung 980 , PCIe3.0 x4 / NVMe1.3, M2 Type 2280, Read: 3500 MB/s, Write: 2300 MB/s, Read /Write: 250,000/550,000 IOPS, Controller Samsung Phoenix, 3D TLC (V-NAND) форм-фактор: 2280, M емкость: 500 ГБ скорость чтения/записи: 3100 МБ/с / 2600 МБ/с интерфейс подключения: M.2, PCI-E 3.0 x4 тип флэш-п
- M.2 NVMe SSD 1.0TB Samsung 980 , PCIe3.0 x4 / NVMe1.3, M2 Type 2280, Read: 3500 MB/s, Write: 2300 MB/s, Read /Write: 250,000/550,000 IOPS, Controller Samsung Phoenix, 3D TLC (V-NAND)M.2 NVMe SSD 1.0TB Samsung 980 , PCIe3.0 x4 / NVMe1.3, M2 Type 2280, Read: 3500 MB/s, Write: 2300 MB/s, Read /Write: 250,000/550,000 IOPS, Controller Samsung Phoenix, 3D TLC (V-NAND) форм-фактор: 2280, M емкость: 1000 ГБ скорость чтения/записи: 3500 МБ/с / 3000 МБ/с интерфейс подключения: M.2, PCI-E 3.0 x4 тип флэш-
- M.2 NVMe SSD 1.0TB Samsung SSD 990 PRO w/Heatsink, PCIe4.0 x4 / NVMe2.0, M2 Type 2280 form factor, Seq. Read: 7450 MB/s, Seq. Write: 6900 MB/s, Max Random 4k: Read /Write: 1200,000/1550,000 IOPS, Samsung in-house Controller, 1GB LPDDR4, V-NAND 3-bit MLCM.2 NVMe SSD 1.0TB Samsung SSD 990 PRO w/Heatsink, PCIe4.0 x4 / NVMe2.0, M2 Type 2280 form factor, Seq. Read: 7450 MB/s, Seq. Write: 6900 MB/s, Max Random 4k: Read /Write: 1200,000/1550,000 IOPS, Samsung in-house Controller, 1GB LPDDR4, V-NAND 3-bit MLC Бренд: Samsung Модель 990 PRO Форм-фактор накопителя M.2 NVMe
- M.2 NVMe SSD 1.0TB Samsung SSD 990 PRO w/Heatsink RGB Lights, PCIe4.0 x4 / NVMe2.0, M2 Type 2280 form factor, Seq. Read: 7450 MB/s, Seq. Write: 6900 MB/s, Max Random 4k: Read /Write: 1200,000/1550,000 IOPS, Samsung in-house Controller, 1GB LPDDR4, V-NANDM.2 NVMe SSD 1.0TB Samsung SSD 990 PRO w/Heatsink RGB Lights, PCIe4.0 x4 / NVMe2.0, M2 Type 2280 form factor, Seq. Read: 7450 MB/s, Seq. Write: 6900 MB/s, Max Random 4k: Read /Write: 1200,000/1550,000 IOPS, Samsung in-house Controller, 1GB LPDDR4, V-NAND Бренд: Samsung Модель 990 PRO Форм-фактор накопителя M.2 NVMe
- M.2 NVMe SSD 2.0TB Samsung SSD 990 PRO w/Hetsing RGB Lights, PCIe4.0 x4 / NVMe2.0, M2 Type 2280 form factor, Seq. Read: 7450 MB/s, Seq. Write: 6900 MB/s, Max Random 4k: Read /Write: 1400,000/1550,000 IOPS, Samsung in-house Controller, 2GB LPDDR4, V-NAND M.2 NVMe SSD 2.0TB Samsung SSD 990 PRO w/Hetsing RGB Lights, PCIe4.0 x4 / NVMe2.0, M2 Type 2280 form factor, Seq. Read: 7450 MB/s, Seq. Write: 6900 MB/s, Max Random 4k: Read /Write: 1400,000/1550,000 IOPS, Samsung in-house Controller, 2GB LPDDR4, V-NAND Бренд: Samsung Модель 990 PRO Форм-фактор накопителя M.2 NVMe
- 2.5" SSD 4.0TB Samsung SSD 870 QVO, SATAIII, Sequential Reads: 560 MB/s, Sequential Writes: 530 MB/s, Max Random 4k: Read: 98,000 IOPS / Write: 88,000 IOPS, 7mm, Cache 4GB LPDDR4, Samsung MKX controller, V-NAND 4bit MLC2.5" SSD 4.0TB Samsung SSD 870 QVO, SATAIII, Sequential Reads: 560 MB/s, Sequential Writes: 530 MB/s, Max Random 4k: Read: 98,000 IOPS / Write: 88,000 IOPS, 7mm, Cache 4GB LPDDR4, Samsung MKX controller, V-NAND 4bit MLC форм-фактор: 2.5" емкость: 4000 ГБ скорость чтения/записи: 560 МБ/с / 530 МБ/с интерфейс подключе
- M.2 NVMe SSD 250GB Samsung 980 , PCIe3.0 x4 / NVMe1.3, M2 Type 2280, Read: 3500 MB/s, Write: 2300 MB/s, Read /Write: 250,000/550,000 IOPS, Controller Samsung Phoenix, 3D TLC (V-NAND)M.2 NVMe SSD 250GB Samsung 980 , PCIe3.0 x4 / NVMe1.3, M2 Type 2280, Read: 3500 MB/s, Write: 2300 MB/s, Read /Write: 250,000/550,000 IOPS, Controller Samsung Phoenix, 3D TLC (V-NAND) Объём накопителя 256 ГБ Тип ячеек памяти TLC
- M.2 NVMe SSD 250GB Samsung SSD 980, PCIe3.0 x4 / NVMe1.4, M2 Type 2280 form factor, Seq. Read: 2900 MB/s, Seq. Write: 1300 MB/s, Max Random 4k: Read /Write: 230K/320K IOPS, Samsung Pablo Controller, 512MB LPDDR4, V-NAND 3-bit MLCM.2 NVMe SSD 250GB Samsung SSD 980, PCIe3.0 x4 / NVMe1.4, M2 Type 2280 form factor, Seq. Read: 2900 MB/s, Seq. Write: 1300 MB/s, Max Random 4k: Read /Write: 230K/320K IOPS, Samsung Pablo Controller, 512MB LPDDR4, V-NAND 3-bit MLC Объём накопителя 250 ГБ
- M.2 NVMe SSD 250GB Samsung 970 EVO Plus, PCIe3.0 x4 / NVMe1.3, M2 Type 2280, Read: 3500 MB/s, Write: 2300 MB/s, Read /Write: 250,000/550,000 IOPS, Controller Samsung Phoenix, 3D TLC (V-NAND)M.2 NVMe SSD 250GB Samsung 970 EVO Plus, PCIe3.0 x4 / NVMe1.3, M2 Type 2280, Read: 3500 MB/s, Write: 2300 MB/s, Read /Write: 250,000/550,000 IOPS, Controller Samsung Phoenix, 3D TLC (V-NAND) Объём накопителя, ГБ 250 Максимальная скорость записи, Мбайт/с 2300 Максимальная скорость чтения, Мбайт/с 3500
- 2.5" SSD 250GB Samsung SSD 870 EVO, SATAIII, Sequential Reads: 560 MB/s, Sequential Writes: 530 MB/s, Max Random 4k: Read: 98,000 IOPS / Write: 88,000 IOPS, 7mm, 512MB Cache, Samsung MKX controller, V-NAND 3bit MLC2.5" SSD 250GB Samsung SSD 870 EVO, SATAIII, Sequential Reads: 560 MB/s, Sequential Writes: 530 MB/s, Max Random 4k: Read: 98,000 IOPS / Write: 88,000 IOPS, 7mm, 512MB Cache, Samsung MKX controller, V-NAND 3bit MLC Объём накопителя 250 ГБ Тип ячеек памяти MLC
- 2.5" SSD 500GB Samsung SSD 870 EVO, SATAIII, Sequential Reads: 560 MB/s, Sequential Writes: 530 MB/s, Max Random 4k: Read: 98,000 IOPS / Write: 88,000 IOPS, 7mm, 512MB Cache, Samsung MKX controller, V-NAND 3bit MLC2.5" SSD 500GB Samsung SSD 870 EVO, SATAIII, Sequential Reads: 560 MB/s, Sequential Writes: 530 MB/s, Max Random 4k: Read: 98,000 IOPS / Write: 88,000 IOPS, 7mm, 512MB Cache, Samsung MKX controller, V-NAND 3bit MLC Объём накопителя 500 ГБ Тип ячеек памяти MLC V-NAND
- M.2 NVMe SSD 1.0TB Samsung SSD 980, PCIe3.0 x4 / NVMe1.4, M2 Type 2280 form factor, Seq. Read: 3500 MB/s, Seq. Write: 3000 MB/s, Max Random 4k: Read /Write: 500K/480K IOPS, Samsung Pablo Controller, 512MB LPDDR4, V-NAND 3-bit MLCM.2 NVMe SSD 1.0TB Samsung SSD 980, PCIe3.0 x4 / NVMe1.4, M2 Type 2280 form factor, Seq. Read: 3500 MB/s, Seq. Write: 3000 MB/s, Max Random 4k: Read /Write: 500K/480K IOPS, Samsung Pablo Controller, 512MB LPDDR4, V-NAND 3-bit MLC Объём накопителя 1 ТБ
- 2.5" SSD 1.0TB Samsung SSD 870 QVO, SATAIII, Sequential Reads: 560 MB/s, Sequential Writes: 530 MB/s, Max Random 4k: Read: 98,000 IOPS / Write: 88,000 IOPS, 7mm, Cache 1GB LPDDR4, Samsung MKX controller, V-NAND 4bit MLC2.5" SSD 1.0TB Samsung SSD 870 QVO, SATAIII, Sequential Reads: 560 MB/s, Sequential Writes: 530 MB/s, Max Random 4k: Read: 98,000 IOPS / Write: 88,000 IOPS, 7mm, Cache 1GB LPDDR4, Samsung MKX controller, V-NAND 4bit MLC Формфактор 2.5" Объем 1 Tб Интерфейс SATA III Скорость чтения 560 МБ/с Скорость записи 530 МБ/с Т
- 2.5" SSD 1.0TB Samsung SSD 870 EVO, SATAIII, Sequential Reads: 560 MB/s, Sequential Writes: 530 MB/s, Max Random 4k: Read: 98,000 IOPS / Write: 88,000 IOPS, 7mm, 1GB LPDDR4 Cache, Samsung MKX controller, V-NAND 3bit MLC2.5" SSD 1.0TB Samsung SSD 870 EVO, SATAIII, Sequential Reads: 560 MB/s, Sequential Writes: 530 MB/s, Max Random 4k: Read: 98,000 IOPS / Write: 88,000 IOPS, 7mm, 1GB LPDDR4 Cache, Samsung MKX controller, V-NAND 3bit MLC Объём накопителя 1 ТБ Тип ячеек памяти MLC V-NAND
- M.2 NVMe SSD 1.0TB Samsung SSD 990 PRO, PCIe4.0 x4 / NVMe2.0, M2 Type 2280 form factor, Seq. Read: 7450 MB/s, Seq. Write: 6900 MB/s, Max Random 4k: Read /Write: 1200,000/1550,000 IOPS, Samsung in-house Controller, 1GB LPDDR4, V-NAND 3-bit MLCM.2 NVMe SSD 1.0TB Samsung SSD 990 PRO, PCIe4.0 x4 / NVMe2.0, M2 Type 2280 form factor, Seq. Read: 7450 MB/s, Seq. Write: 6900 MB/s, Max Random 4k: Read /Write: 1200,000/1550,000 IOPS, Samsung in-house Controller, 1GB LPDDR4, V-NAND 3-bit MLC Общий объем накопителей: 1000 Гб Система хранения данных: M.2 2280 Интерфе
- M.2 NVMe SSD 2.0TB Samsung SSD 990 PRO, PCIe4.0 x4 / NVMe2.0, M2 Type 2280 form factor, Seq. Read: 7450 MB/s, Seq. Write: 6900 MB/s, Max Random 4k: Read /Write: 1400,000/1550,000 IOPS, Samsung in-house Controller, 2GB LPDDR4, V-NAND 3-bit MLCM.2 NVMe SSD 2.0TB Samsung SSD 990 PRO, PCIe4.0 x4 / NVMe2.0, M2 Type 2280 form factor, Seq. Read: 7450 MB/s, Seq. Write: 6900 MB/s, Max Random 4k: Read /Write: 1400,000/1550,000 IOPS, Samsung in-house Controller, 2GB LPDDR4, V-NAND 3-bit MLC Освободите мощность Samsung 990 PRO для компьютерных систем следующего пок
- M.2 NVMe SSD 256GB Samsung PM991, Interface: PCIe3.0 x4 / NVMe1.3, M2 Type 2242 form factor, Sequential Read: 2050 MB/s, Sequential Write: 1000 MB/s, Max Random 4k: Read / Write: 64K IOPS/220K IOPS, Samsung Phoenix controller, V-NAND TLC, BulkM.2 NVMe SSD 256GB Samsung PM991, Interface: PCIe3.0 x4 / NVMe1.3, M2 Type 2242 form factor, Sequential Read: 2050 MB/s, Sequential Write: 1000 MB/s, Max Random 4k: Read / Write: 64K IOPS/220K IOPS, Samsung Phoenix controller, V-NAND TLC, Bulk Объём накопителя 256 ГБ Тип ячеек памяти V-NAND TLC Максимальная скор
- M.2 NVMe SSD 500GB Samsung SSD 980, PCIe3.0 x4 / NVMe1.4, M2 Type 2280 form factor, Seq. Read: 3100 MB/s, Seq. Write: 2600 MB/s, Max Random 4k: Read /Write: 400K/470K IOPS, Samsung Pablo Controller, 512MB LPDDR4, V-NAND 3-bit MLCM.2 NVMe SSD 500GB Samsung SSD 980, PCIe3.0 x4 / NVMe1.4, M2 Type 2280 form factor, Seq. Read: 3100 MB/s, Seq. Write: 2600 MB/s, Max Random 4k: Read /Write: 400K/470K IOPS, Samsung Pablo Controller, 512MB LPDDR4, V-NAND 3-bit MLC
- M.2 NVMe SSD 1.0TB Samsung SSD 980 PRO w/Heatsink, PCIe4.0 x4 / NVMe1.3c, M2 Type 2280 form factor, Seq. Read: 7000 MB/s, Seq. Write: 5000 MB/s, Max Random 4k: Read /Write: 1000,000/1000,000 IOPS, Samsung Elpis Controller, 1GB LPDDR4, PCI-SIG® D8 standarM.2 NVMe SSD 1.0TB Samsung SSD 980 PRO w/Heatsink, PCIe4.0 x4 / NVMe1.3c, M2 Type 2280 form factor, Seq. Read: 7000 MB/s, Seq. Write: 5000 MB/s, Max Random 4k: Read /Write: 1000,000/1000,000 IOPS, Samsung Elpis Controller, 1GB LPDDR4, PCI-SIG® D8 standar Объём накопителя 1 ТБ Тип ячеек памяти 3D TLC
- M.2 NVMe SSD 2.0TB Samsung SSD 980 PRO, PCIe4.0 x4 / NVMe1.3c, M2 Type 2280 form factor, Seq. Read: 7000 MB/s, Seq. Write: 5100 MB/s, Max Random 4k: Read /Write: 1,000,000/ 1,000,000 IOPS, Samsung Elpis Controller, 2GB LPDDR4, PCI-SIG® D8 standard, V-NANM.2 NVMe SSD 2.0TB Samsung SSD 980 PRO, PCIe4.0 x4 / NVMe1.3c, M2 Type 2280 form factor, Seq. Read: 7000 MB/s, Seq. Write: 5100 MB/s, Max Random 4k: Read /Write: 1,000,000/ 1,000,000 IOPS, Samsung Elpis Controller, 2GB LPDDR4, PCI-SIG® D8 standard, V-NAN Объём накопителя 2000 ГБ Тип ячеек памяти 3D TLC Максимальная
- M.2 NVMe SSD 2.0TB Samsung SSD 980 PRO w/Heatsink, PCIe4.0 x4 / NVMe1.3c, M2 Type 2280 form factor, Seq. Read: 7000 MB/s, Seq. Write: 5100 MB/s, Max Random 4k: Read /Write: 1,000,000/ 1,000,000 IOPS, Samsung Elpis Controller, 2GB LPDDR4, PCI-SIG® D8 stanM.2 NVMe SSD 2.0TB Samsung SSD 980 PRO w/Heatsink, PCIe4.0 x4 / NVMe1.3c, M2 Type 2280 form factor, Seq. Read: 7000 MB/s, Seq. Write: 5100 MB/s, Max Random 4k: Read /Write: 1,000,000/ 1,000,000 IOPS, Samsung Elpis Controller, 2GB LPDDR4, PCI-SIG® D8 stan Объём накопителя 2000 ГБ Тип ячеек памяти 3D TLC Максимальн
- .M.2 NVMe SSD 500GB Samsung 970 EVO Plus [PCIe 3.0 x4, R/W:3500/3200MB/s, 480/550K IOPS, Phx, TLC].M.2 NVMe SSD 500GB Samsung 970 EVO Plus [PCIe 3.0 x4, R/W:3500/3200MB/s, 480/550K IOPS, Phx, TLC] SSD накопитель, который предлагает большее Твердотельные накопители (SSD) Samsung серии 970 Evo обеспечивают невероятную скорость, лучшую в своем классе надежность и широкий выбор емкостей вплоть до 2 ТБ*. Новейшая тех
- .M.2 NVMe SSD 1.0TB Samsung 970 EVO Plus [PCIe 3.0 x4, R/W:3500/3300MB/s, 600/550K IOPS, Phx, TLC].M.2 NVMe SSD 1.0TB Samsung 970 EVO Plus [PCIe 3.0 x4, R/W:3500/3300MB/s, 600/550K IOPS, Phx, TLC] SSD накопитель, который предлагает большее Твердотельные накопители (SSD) Samsung серии 970 Evo обеспечивают невероятную скорость, лучшую в своем классе надежность и широкий выбор емкостей вплоть до 2 ТБ*. Новейшая техн
- 250GB SSD 2.5" Samsung 870 EVO MZ-77E250BW, Read 560MB/s, Write 530MB/s, SATA III 6.0Gbps (solid state drive intern SSD/внутрений высокоскоростной накопитель SSD)250GB SSD 2.5" Samsung 870 EVO MZ-77E250BW, Read 560MB/s, Write 530MB/s, SATA III 6.0Gbps (solid state drive intern SSD/внутрений высокоскоростной накопитель SSD) Бренд SAMSUNG Модель 870 EVO MZ-77E250BW Форм-фактор накопителя 2.5" Память накопителя 250 ГБ Контроллер Samsung MKX Тип чипов MLC (Multi Level Cell) Скоро
- 1.0TB (USB3.2/Type-C) Samsung Portable SSD T7 , Тitan Grey (85x57x8mm, 58g, R/W:1050/1000MB/s) 1.0TB (USB3.2/Type-C) Samsung Portable SSD T7 , Тitan Grey (85x57x8mm, 58g, R/W:1050/1000MB/s) Бренд SAMSUNG Модель T7 Grey Память накопителя 1.0 ТБ Скорость чтения 1050 МБ/с Скорость записи 1000 Мб/с Интерфейс накопителя USB3.2/Type-C
- 1.0TB (USB3.2/Type-C) Samsung Portable SSD T7 , Blue (85x57x8mm, 58g, R/W:1050/1000MB/s) 1.0TB (USB3.2/Type-C) Samsung Portable SSD T7 , Blue (85x57x8mm, 58g, R/W:1050/1000MB/s) Бренд SAMSUNG Модель T7 Blue Память накопителя 1.0 ТБ Скорость чтения 1050 МБ/с Скорость записи 1000 Мб/с Интерфейс накопителя USB3.2/Type-C
- .M.2 NVMe SSD 1.0TB Samsung 990 PRO [PCIe 4.0 x4, R/W:7450/6900MB/s, 1200K/1550K IOPS, 600TB, 3DTLC].M.2 NVMe SSD 1.0TB Samsung 990 PRO [PCIe 4.0 x4, R/W:7450/6900MB/s, 1200K/1550K IOPS, 600TB, 3DTLC] Capacitate stocare: 1000 GB Sistem de stocare a datelor: M.2 2280 Interfa?a SSD: NVMe PCIe 4.0 x4 Tip de memorie flash: Samsung V-NAND Общий объем накопителей: 1000 Гб Система хранения данных: M.2 2280 Интерфе