DKVM-4K
(70)- 2.5" SSD 120GB Patriot Burst Elite, SATAIII, Sequential Read: 450MB/s, Sequential Write: 320MB/s, 4K Random Read: 40K IOPS, 4K Random Write: 40K IOPS, SMART ZIP, TRIM, 7mm, TBW: up to 50TB, Phison S11 Controller, 3D NAND TLC2.5" SSD 120GB Patriot Burst Elite, SATAIII, Sequential Read: 450MB/s, Sequential Write: 320MB/s, 4K Random Read: 40K IOPS, 4K Random Write: 40K IOPS, SMART ZIP, TRIM, 7mm, TBW: up to 50TB, Phison S11 Controller, 3D NAND TLC Объём накопителя 120 ГБ Тип ячеек памяти 3D NAND TLC Максимальная скорость записи, мб/с
- 2,5" SSD 128GB Patriot P220, SATAIII, Sequential Read: 550MB/s, Sequential Write: 480MB/s, 4K Random Read: 40K IOPS, 4K Random Write: 50K IOPS, SMART, TRIM, 7mm, TBW: 60TB, Phison S12 Controller, 3D NAND TLC2,5" SSD 128GB Patriot P220, SATAIII, Sequential Read: 550MB/s, Sequential Write: 480MB/s, 4K Random Read: 40K IOPS, 4K Random Write: 50K IOPS, SMART, TRIM, 7mm, TBW: 60TB, Phison S12 Controller, 3D NAND TLC Объём накопителя 128 ГБ Тип ячеек памяти 3D NAND TLC Максимальная скорость записи, мб/с 480 Максимальная с
- 2,5" SSD 128GB Patriot P210, SATAIII, Sequential Read: 450MB/s, Sequential Write: 350MB/s, 4K Random Read: 30K IOPS, 4K Random Write: 30K IOPS, SMART, TRIM, 7mm, TBW: 60TB, SMI 2259XT Controller, 3D NAND TLC2,5" SSD 128GB Patriot P210, SATAIII, Sequential Read: 450MB/s, Sequential Write: 350MB/s, 4K Random Read: 30K IOPS, 4K Random Write: 30K IOPS, SMART, TRIM, 7mm, TBW: 60TB, SMI 2259XT Controller, 3D NAND TLC Объём накопителя 128 ГБ Тип ячеек памяти 3D NAND TLC Максимальная скорость записи, мб/с 450 Максимальная с
- 2.5" SSD 240GB Patriot Burst Elite, SATAIII, Sequential Read: 450MB/s, Sequential Write: 320MB/s, 4K Random Read: 40K IOPS, 4K Random Write: 40K IOPS, SMART ZIP, TRIM, 7mm, TBW: up to 100TB, Phison S11 Controller, 3D NAND TLC2.5" SSD 240GB Patriot Burst Elite, SATAIII, Sequential Read: 450MB/s, Sequential Write: 320MB/s, 4K Random Read: 40K IOPS, 4K Random Write: 40K IOPS, SMART ZIP, TRIM, 7mm, TBW: up to 100TB, Phison S11 Controller, 3D NAND TLC Объём накопителя 240 ГБ Тип ячеек памяти 3D NAND TLC Максимальная скорость записи, мб/с
- 2,5" SSD 256GB Patriot P220, SATAIII, Sequential Read: 550MB/s, Sequential Write: 490MB/s, 4K Random Read: 40K IOPS, 4K Random Write: 50K IOPS, SMART, TRIM, 7mm, TBW: 120TB, Phison S12 Controller, 3D NAND TLC2,5" SSD 256GB Patriot P220, SATAIII, Sequential Read: 550MB/s, Sequential Write: 490MB/s, 4K Random Read: 40K IOPS, 4K Random Write: 50K IOPS, SMART, TRIM, 7mm, TBW: 120TB, Phison S12 Controller, 3D NAND TLC Объём накопителя 256 ГБ Тип ячеек памяти 3D NAND TLC Максимальная скорость записи, мб/с 490 Максимальная
- 2,5" SSD 256GB Patriot P210, SATAIII, Sequential Read: 500MB/s, Sequential Write: 400MB/s, 4K Random Read: 50K IOPS, 4K Random Write: 30K IOPS, SMART, TRIM, 7mm, TBW: 120TB, SMI 2259XT Controller, 3D NAND TLC2,5" SSD 256GB Patriot P210, SATAIII, Sequential Read: 500MB/s, Sequential Write: 400MB/s, 4K Random Read: 50K IOPS, 4K Random Write: 30K IOPS, SMART, TRIM, 7mm, TBW: 120TB, SMI 2259XT Controller, 3D NAND TLC Объём накопителя 256 ГБ Тип ячеек памяти 3D NAND TLC Максимальная скорость записи, мб/с 5546 Максимальная
- 2.5" SSD 480GB Patriot Burst Elite, SATAIII, Sequential Read: 450MB/s, Sequential Write: 320MB/s, 4K Random Read: 40K IOPS, 4K Random Write: 40K IOPS, SMART ZIP, TRIM, 7mm, TBW: up to 200TB, Phison S11 Controller, 3D NAND TLC2.5" SSD 480GB Patriot Burst Elite, SATAIII, Sequential Read: 450MB/s, Sequential Write: 320MB/s, 4K Random Read: 40K IOPS, 4K Random Write: 40K IOPS, SMART ZIP, TRIM, 7mm, TBW: up to 200TB, Phison S11 Controller, 3D NAND TLC Объём накопителя 480 ГБ Тип ячеек памяти 3D NAND TLC Максимальная скорость записи, мб/с
- 2,5" SSD 512GB Patriot P210, SATAIII, Sequential Read: 520MB/s, Sequential Write: 430MB/s, 4K Random Read: 50K IOPS, 4K Random Write: 50K IOPS, SMART, TRIM, 7mm, TBW: 240TB, SMI 2259XT Controller, 3D NAND TLC2,5" SSD 512GB Patriot P210, SATAIII, Sequential Read: 520MB/s, Sequential Write: 430MB/s, 4K Random Read: 50K IOPS, 4K Random Write: 50K IOPS, SMART, TRIM, 7mm, TBW: 240TB, SMI 2259XT Controller, 3D NAND TLC Объём накопителя 512 ГБ Тип ячеек памяти 3D NAND TLC Максимальная скорость записи, мб/с 430 Максимальная
- 2,5" SSD 512GB Patriot P220, SATAIII, Sequential Read: 550MB/s, Sequential Write: 500MB/s, 4K Random Read: 40K IOPS, 4K Random Write: 50K IOPS, SMART, TRIM, 7mm, TBW: 240TB, Phison S12 Controller, 3D NAND TLC2,5" SSD 512GB Patriot P220, SATAIII, Sequential Read: 550MB/s, Sequential Write: 500MB/s, 4K Random Read: 40K IOPS, 4K Random Write: 50K IOPS, SMART, TRIM, 7mm, TBW: 240TB, Phison S12 Controller, 3D NAND TLC Объём накопителя 512 ГБ Тип ячеек памяти 3D NAND TLC Максимальная скорость записи, мб/с 500 Максимальная
- 2.5" SSD 960GB Patriot Burst Elite, SATAIII, Sequential Read: 450MB/s, Sequential Write: 320MB/s, 4K Random Read: 40K IOPS, 4K Random Write: 40K IOPS, SMART ZIP, TRIM, 7mm, TBW: up to 400TB, Phison S11 Controller, 3D NAND TLC2.5" SSD 960GB Patriot Burst Elite, SATAIII, Sequential Read: 450MB/s, Sequential Write: 320MB/s, 4K Random Read: 40K IOPS, 4K Random Write: 40K IOPS, SMART ZIP, TRIM, 7mm, TBW: up to 400TB, Phison S11 Controller, 3D NAND TLC Объём накопителя 960 ГБ Тип ячеек памяти 3D NAND TLC Максимальная скорость записи, мб/с
- 2,5" SSD 1.0TB Patriot P210, SATAIII, Sequential Read: 520MB/s, Sequential Write: 430MB/s, 4K Random Read: 50K IOPS, 4K Random Write: 50K IOPS, SMART, TRIM, 7mm, TBW: 480TB, SMI 2259XT Controller, 3D NAND TLC2,5" SSD 1.0TB Patriot P210, SATAIII, Sequential Read: 520MB/s, Sequential Write: 430MB/s, 4K Random Read: 50K IOPS, 4K Random Write: 50K IOPS, SMART, TRIM, 7mm, TBW: 480TB, SMI 2259XT Controller, 3D NAND TLC Объём накопителя 1000 ГБ Тип ячеек памяти 3D NAND TLC Максимальная скорость записи, мб/с 430 Максимальная
- 2,5" SSD 1.0TB Patriot P220, SATAIII, Sequential Read: 550MB/s, Sequential Write: 500MB/s, 4K Random Read: 50K IOPS, 4K Random Write: 50K IOPS, SMART, TRIM, 7mm, TBW: 480TB, Phison S12 Controller, 3D NAND TLC2,5" SSD 1.0TB Patriot P220, SATAIII, Sequential Read: 550MB/s, Sequential Write: 500MB/s, 4K Random Read: 50K IOPS, 4K Random Write: 50K IOPS, SMART, TRIM, 7mm, TBW: 480TB, Phison S12 Controller, 3D NAND TLC Объём накопителя 1000 ГБ Тип ячеек памяти 3D NAND TLC Максимальная скорость записи, мб/с 500 Максимальная
- 2.5" SSD 1.92TB Patriot Burst Elite, SATAIII, Sequential Read: 450MB/s, Sequential Write: 320MB/s, 4K Random Read: 40K IOPS, 4K Random Write: 40K IOPS, SMART ZIP, TRIM, 7mm, TBW: up to 800TB, Phison S11 Controller, 3D NAND TLC2.5" SSD 1.92TB Patriot Burst Elite, SATAIII, Sequential Read: 450MB/s, Sequential Write: 320MB/s, 4K Random Read: 40K IOPS, 4K Random Write: 40K IOPS, SMART ZIP, TRIM, 7mm, TBW: up to 800TB, Phison S11 Controller, 3D NAND TLC Объём накопителя 2000 ГБ Тип ячеек памяти 3D NAND TLC Максимальная скорость записи, мб/
- 2,5" SSD 2.0TB Patriot P210, SATAIII, Sequential Read: 520MB/s, Sequential Write: 430MB/s, 4K Random Read: 50K IOPS, 4K Random Write: 50K IOPS, SMART, TRIM, 7mm, TBW: 960TB, SMI 2259XT Controller, 3D NAND TLC2,5" SSD 2.0TB Patriot P210, SATAIII, Sequential Read: 520MB/s, Sequential Write: 430MB/s, 4K Random Read: 50K IOPS, 4K Random Write: 50K IOPS, SMART, TRIM, 7mm, TBW: 960TB, SMI 2259XT Controller, 3D NAND TLC Объём накопителя 2000 ГБ Тип ячеек памяти 3D NAND TLC Максимальная скорость записи, мб/с 430 Максимальная
- 2,5" SSD 2.0TB Patriot P220, SATAIII, Sequential Read: 550MB/s, Sequential Write: 500MB/s, 4K Random Read: 50K IOPS, 4K Random Write: 50K IOPS, SMART, TRIM, 7mm, TBW: 960TB, Phison S12 Controller, 3D NAND TLC2,5" SSD 2.0TB Patriot P220, SATAIII, Sequential Read: 550MB/s, Sequential Write: 500MB/s, 4K Random Read: 50K IOPS, 4K Random Write: 50K IOPS, SMART, TRIM, 7mm, TBW: 960TB, Phison S12 Controller, 3D NAND TLC Объём накопителя: 2000 ГБ Тип ячеек памяти 3D NAND TLC Максимальная скорость записи, мб/с 500 Максимальна
- M.2 NVMe SSD 1.0TB Samsung SSD 970 EVO Plus, Interface: PCIe3.0 x4 / NVMe1.3, M2 Type 2280 form factor, Seq. Read: 3500 MB/s, Seq. Write: 3300 MB/s, Max Random 4k: Read /Write: 600,000/550,000 IOPS, Samsung Phoenix controller, 3D TLC (V-NAND)M.2 NVMe SSD 1.0TB Samsung SSD 970 EVO Plus, Interface: PCIe3.0 x4 / NVMe1.3, M2 Type 2280 form factor, Seq. Read: 3500 MB/s, Seq. Write: 3300 MB/s, Max Random 4k: Read /Write: 600,000/550,000 IOPS, Samsung Phoenix controller, 3D TLC (V-NAND) SSD накопитель, который предлагает большее Твердотельные накопители (SSD)
- 2.5" SSD 128GB GOODRAM CX400 Gen.2, SATAIII, Sequential Reads: 550 MB/s, Sequential Writes: 460 MB/s, Maximum Random 4k: Read: 65,000 IOPS / Write: 82,500 IOPS, Thickness- 7mm, Controller Phison PS3111-S11, 3D NAND TLC2.5" SSD 128GB GOODRAM CX400 Gen.2, SATAIII, Sequential Reads: 550 MB/s, Sequential Writes: 460 MB/s, Maximum Random 4k: Read: 65,000 IOPS / Write: 82,500 IOPS, Thickness- 7mm, Controller Phison PS3111-S11, 3D NAND TLC Объём накопителя 128 ГБ Тип ячеек памяти 3D NAND TLC Максимальная скорость записи 460 МБ/сек Ма
- 2.5" SSD 128GB Verbatim VI550 S3, SATAIII, Sequential Reads: 560 MB/s, Sequential Writes: 430 MB/s, Maximum Random 4k: Read: 61,000 IOPS / Write: 81,000 IOPS, Thickness- 7mm, Controller Phison PS3111, 3D NAND TLC2.5" SSD 128GB Verbatim VI550 S3, SATAIII, Sequential Reads: 560 MB/s, Sequential Writes: 430 MB/s, Maximum Random 4k: Read: 61,000 IOPS / Write: 81,000 IOPS, Thickness- 7mm, Controller Phison PS3111, 3D NAND TLC Производитель изделия Verbatim Модель 2.5" SSD 128GB Verbatim VI550 S3 Формат жесткого диска 2,5 Интерф
- M.2 NVMe SSD 256GB GOODRAM PX500 Gen2, Interface: PCIe3.0 x4 / NVMe1.3, M2 Type 2280 form factor, Sequential Reads/Writes 1850 MB/s/ 950 MB/s, Random (4k QD64) Read/Write 102K IOPS/ 230K IOPS, SMI 2263XT, TBW: 70TB, 3D NAND TLC, heat-dissipating thermal pM.2 NVMe SSD 256GB GOODRAM PX500 Gen2, Interface: PCIe3.0 x4 / NVMe1.3, M2 Type 2280 form factor, Sequential Reads/Writes 1850 MB/s/ 950 MB/s, Random (4k QD64) Read/Write 102K IOPS/ 230K IOPS, SMI 2263XT, TBW: 70TB, 3D NAND TLC, heat-dissipating thermal Бренд GOODRAM Модель PX500 Форм-фактор накопителя M.2 NVMe Памя
- M.2 SATA SSD 256GB Verbatim Vi560 S3, SATA 6Gb/s, M.2 Type 2280 form factor, Sequential Reads: 560 MB/s, Sequential Writes: 460 MB/s, Max Random 4k: Read: 102,000 IOPS / Write: 80,000 IOPS, Phison Controller, 3D NAND TLCM.2 SATA SSD 256GB Verbatim Vi560 S3, SATA 6Gb/s, M.2 Type 2280 form factor, Sequential Reads: 560 MB/s, Sequential Writes: 460 MB/s, Max Random 4k: Read: 102,000 IOPS / Write: 80,000 IOPS, Phison Controller, 3D NAND TLC Форм-фактор: M.2 2280 Основной интерфейс: интерфейс Serial ATA со скоростью передачи данных 6 Гб
- 2.5" SSD 256GB GOODRAM CX400 Gen.2, SATAIII, Sequential Reads: 550 MB/s, Sequential Writes: 480 MB/s, Maximum Random 4k: Read: 65,000 IOPS / Write: 61,440 IOPS, Thickness- 7mm, Controller Phison PS3111-S11, 3D NAND TLC2.5" SSD 256GB GOODRAM CX400 Gen.2, SATAIII, Sequential Reads: 550 MB/s, Sequential Writes: 480 MB/s, Maximum Random 4k: Read: 65,000 IOPS / Write: 61,440 IOPS, Thickness- 7mm, Controller Phison PS3111-S11, 3D NAND TLC Объем 256 ГБ Формфактор 2.5" Интерфейс SATAIII
- 2.5" SSD 256GB Verbatim VI550 S3, SATAIII, Sequential Reads: 560 MB/s, Sequential Writes: 460 MB/s, Maximum Random 4k: Read: 65,000 IOPS / Write: 85,000 IOPS, Thickness- 7mm, Controller Phison PS3111, 3D NAND TLC2.5" SSD 256GB Verbatim VI550 S3, SATAIII, Sequential Reads: 560 MB/s, Sequential Writes: 460 MB/s, Maximum Random 4k: Read: 65,000 IOPS / Write: 85,000 IOPS, Thickness- 7mm, Controller Phison PS3111, 3D NAND TLC Производитель изделия Verbatim Модель 2.5" SSD 256GB Verbatim VI550 S3 Архитектура жесткого диска NAND
- 2.5" SSD 256GB GOODRAM IRDM PRO GEN.2, SATAIII, Sequential Reads: 555 MB/s, Sequential Writes: 535 MB/s, Maximum Random 4k: Read: 96,000 IOPS / Write: 81,000 IOPS, Thickness- 7mm, Controller 8Channel Phison PS3112-S12, DRAM DDR3L cache, 3D NAND TLC2.5" SSD 256GB GOODRAM IRDM PRO GEN.2, SATAIII, Sequential Reads: 555 MB/s, Sequential Writes: 535 MB/s, Maximum Random 4k: Read: 96,000 IOPS / Write: 81,000 IOPS, Thickness- 7mm, Controller 8Channel Phison PS3112-S12, DRAM DDR3L cache, 3D NAND TLC Модель IRDM PRO GEN.2 IRP-SSDPR-S25C-256 Форм-фактор накопителя 2,5"
- M.2 NVMe SSD 256GB GOODRAM IRDM, Interface: PCIe3.0 x4 / NVMe1.3, M2 Type 2280 form factor, Sequential Reads/Writes 3000 MB/s/ 1000 MB/s, Random 4K Read/Write 149K IOPS/ 250K IOPS, 8-Channel Phison E12 w/DRAM buffer, 3D NAND TLCM.2 NVMe SSD 256GB GOODRAM IRDM, Interface: PCIe3.0 x4 / NVMe1.3, M2 Type 2280 form factor, Sequential Reads/Writes 3000 MB/s/ 1000 MB/s, Random 4K Read/Write 149K IOPS/ 250K IOPS, 8-Channel Phison E12 w/DRAM buffer, 3D NAND TLC Формфактор SSD M.2 Объем 256 Гб Интерфейс PCI Express 3.0 x4 Скорость чтения 3000 МБ/с Ск
- 2.5" SSD 512GB GOODRAM CX400, SATAIII, Sequential Reads: 550 MB/s, Sequential Writes: 490 MB/s, Maximum Random 4k: Read: 77,500 IOPS / Write: 85,000 IOPS, Thickness- 7mm, Controller Phison PS3111-S11, 3D NAND TLC2.5" SSD 512GB GOODRAM CX400, SATAIII, Sequential Reads: 550 MB/s, Sequential Writes: 490 MB/s, Maximum Random 4k: Read: 77,500 IOPS / Write: 85,000 IOPS, Thickness- 7mm, Controller Phison PS3111-S11, 3D NAND TLC Ваш старый ПК теперь как новый Скоростной флеш-накопитель на основе технологии 3D TLC и контроллер Phiso
- M.2 SATA SSD 512GB Verbatim Vi560 S3, SATA 6Gb/s, M.2 Type 2280 form factor, Sequential Reads: 560 MB/s, Sequential Writes: 520 MB/s, Max Random 4k: Read: 101,376 IOPS / Write: 80,400 IOPS, Phison Controller, 3D NAND TLCM.2 SATA SSD 512GB Verbatim Vi560 S3, SATA 6Gb/s, M.2 Type 2280 form factor, Sequential Reads: 560 MB/s, Sequential Writes: 520 MB/s, Max Random 4k: Read: 101,376 IOPS / Write: 80,400 IOPS, Phison Controller, 3D NAND TLC Объём накопителя 512 ГБ Тип ячеек памяти 3D NAND TLC
- 2.5" SSD 512GB GOODRAM CX400 Gen.2, SATAIII, Sequential Reads: 550 MB/s, Sequential Writes: 500 MB/s, Maximum Random 4k: Read: 75,500 IOPS / Write: 76,800 IOPS, Thickness- 7mm, Controller Phison PS3111-S11, 3D NAND TLC2.5" SSD 512GB GOODRAM CX400 Gen.2, SATAIII, Sequential Reads: 550 MB/s, Sequential Writes: 500 MB/s, Maximum Random 4k: Read: 75,500 IOPS / Write: 76,800 IOPS, Thickness- 7mm, Controller Phison PS3111-S11, 3D NAND TLC Объем 512 ГБ Скорость чтения 550 МБ/с Скорость записи 500 МБ/с Энергопотребление В режиме чтения:
- 2.5" SSD 512GB Verbatim VI550 S3, SATAIII, Sequential Reads: 560 MB/s, Sequential Writes: 535 MB/s, Maximum Random 4k: Read: 75,000 IOPS / Write: 86,000 IOPS, Thickness- 7mm, Controller Phison PS3111, 3D NAND TLC2.5" SSD 512GB Verbatim VI550 S3, SATAIII, Sequential Reads: 560 MB/s, Sequential Writes: 535 MB/s, Maximum Random 4k: Read: 75,000 IOPS / Write: 86,000 IOPS, Thickness- 7mm, Controller Phison PS3111, 3D NAND TLC Внутренний 7-мм твердотельный накопитель 2,5'' SATA III Высокая надежность за счет превосходного флэш-ко
- M.2 NVMe SSD 500GB MSI Spatium M450, PCIe4.0 x4 / NVMe1.4, M2 Type 2280 form factor, Seq. Read: 3600 MB/s, Seq. Write: 2300 MB/s, Max Random 4k: Read /Write: 300,000 / 550,000 IOPS, Controller Phison E19T, LDPC ECC Algorithm, E-t-E Data Protection, APST,M.2 NVMe SSD 500GB MSI Spatium M450, PCIe4.0 x4 / NVMe1.4, M2 Type 2280 form factor, Seq. Read: 3600 MB/s, Seq. Write: 2300 MB/s, Max Random 4k: Read /Write: 300,000 / 550,000 IOPS, Controller Phison E19T, LDPC ECC Algorithm, E-t-E Data Protection, APST, Объём накопителя 500 ГБ Тип ячеек памяти 3D NAND TLC Максим
- M.2 NVMe SSD 500GB Samsung SSD 980, PCIe3.0 x4 / NVMe1.4, M2 Type 2280 form factor, Seq. Read: 3100 MB/s, Seq. Write: 2600 MB/s, Max Random 4k: Read /Write: 400K/470K IOPS, Samsung Pablo Controller, 512MB LPDDR4, V-NAND 3-bit MLCM.2 NVMe SSD 500GB Samsung SSD 980, PCIe3.0 x4 / NVMe1.4, M2 Type 2280 form factor, Seq. Read: 3100 MB/s, Seq. Write: 2600 MB/s, Max Random 4k: Read /Write: 400K/470K IOPS, Samsung Pablo Controller, 512MB LPDDR4, V-NAND 3-bit MLC