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(8)- M.2 NVMe SSD 500GB MSI Spatium M450, PCIe4.0 x4 / NVMe1.4, M2 Type 2280 form factor, Seq. Read: 3600 MB/s, Seq. Write: 2300 MB/s, Max Random 4k: Read /Write: 300,000 / 550,000 IOPS, Controller Phison E19T, LDPC ECC Algorithm, E-t-E Data Protection, APST,M.2 NVMe SSD 500GB MSI Spatium M450, PCIe4.0 x4 / NVMe1.4, M2 Type 2280 form factor, Seq. Read: 3600 MB/s, Seq. Write: 2300 MB/s, Max Random 4k: Read /Write: 300,000 / 550,000 IOPS, Controller Phison E19T, LDPC ECC Algorithm, E-t-E Data Protection, APST, Объём накопителя 500 ГБ Тип ячеек памяти 3D NAND TLC Максим
- M.2 NVMe SSD 256GB GOODRAM PX500 Gen.2, PCIe3.0 x4 / NVMe1.3, M2 Type 2280, Read: 1850 MB/s, Write: 950 MB/s, Controller SMI 2263XT, 3D NAND Flash SSDPR-PX500-256-80M.2 NVMe SSD 256GB GOODRAM PX500 Gen.2, PCIe3.0 x4 / NVMe1.3, M2 Type 2280, Read: 1850 MB/s, Write: 950 MB/s, Controller SMI 2263XT, 3D NAND Flash SSDPR-PX500-256-80 Объем (ГБ) 256 Интерфейс PCIe3.0 x4 / NVMe1.3 Скорость чтения (МБ/с) 1850 Скорость записи (МБ/с) 950 Время наработки на отказ (ч) 1500000 Форм-фактор
- M.2 NVMe SSD 256GB GOODRAM PX500 Gen2, Interface: PCIe3.0 x4 / NVMe1.3, M2 Type 2280 form factor, Sequential Reads/Writes 1850 MB/s/ 950 MB/s, Random (4k QD64) Read/Write 102K IOPS/ 230K IOPS, SMI 2263XT, TBW: 70TB, 3D NAND TLC, heat-dissipating thermal pM.2 NVMe SSD 256GB GOODRAM PX500 Gen2, Interface: PCIe3.0 x4 / NVMe1.3, M2 Type 2280 form factor, Sequential Reads/Writes 1850 MB/s/ 950 MB/s, Random (4k QD64) Read/Write 102K IOPS/ 230K IOPS, SMI 2263XT, TBW: 70TB, 3D NAND TLC, heat-dissipating thermal Бренд GOODRAM Модель PX500 Форм-фактор накопителя M.2 NVMe Памя
- M.2 NVMe SSD 128GB Patriot P300, Interface: PCIe3.0 x4 / NVMe 1.3, M2 Type 2280 form factor, Sequential Read 1600 MB/s, Sequential Write 600 MB/s, Random Read 290K IOPS, Random Write 150K IOPS, 3D NAND TLCM.2 NVMe SSD 128GB Patriot P300, Interface: PCIe3.0 x4 / NVMe 1.3, M2 Type 2280 form factor, Sequential Read 1600 MB/s, Sequential Write 600 MB/s, Random Read 290K IOPS, Random Write 150K IOPS, 3D NAND TLC Производитель: PATRIOT Тип: SSD накопитель Объем, ГБ: 128 Интерфейс: M.2 (PCI-E 3.0) Поддержка TRIM: есть Форм-ф
- M.2 NVMe SSD 500GB Samsung 980 , PCIe3.0 x4 / NVMe1.3, M2 Type 2280, Read: 3500 MB/s, Write: 2300 MB/s, Read /Write: 250,000/550,000 IOPS, Controller Samsung Phoenix, 3D TLC (V-NAND)M.2 NVMe SSD 500GB Samsung 980 , PCIe3.0 x4 / NVMe1.3, M2 Type 2280, Read: 3500 MB/s, Write: 2300 MB/s, Read /Write: 250,000/550,000 IOPS, Controller Samsung Phoenix, 3D TLC (V-NAND) форм-фактор: 2280, M емкость: 500 ГБ скорость чтения/записи: 3100 МБ/с / 2600 МБ/с интерфейс подключения: M.2, PCI-E 3.0 x4 тип флэш-п
- .M.2 NVMe SSD 512GB Samsung PM9A1 [PCIe 4.0 x4, R/W:6900/5000MB/s, 800/800K IOPS, Elpis, 3DTLC].M.2 NVMe SSD 512GB Samsung PM9A1 [PCIe 4.0 x4, R/W:6900/5000MB/s, 800/800K IOPS, Elpis, 3DTLC] Объём памяти : 512 ГБ Интерфейс : PCI-E 4.0 x4 Бренд : Samsung Форм-фактор : M.2 NVMe Тип флэш-памяти : 3D TLC NAND MTBF : 1500000 ч Цвет : Черный
- M.2 NVMe SSD 1.0TB Samsung 980 , PCIe3.0 x4 / NVMe1.3, M2 Type 2280, Read: 3500 MB/s, Write: 2300 MB/s, Read /Write: 250,000/550,000 IOPS, Controller Samsung Phoenix, 3D TLC (V-NAND)M.2 NVMe SSD 1.0TB Samsung 980 , PCIe3.0 x4 / NVMe1.3, M2 Type 2280, Read: 3500 MB/s, Write: 2300 MB/s, Read /Write: 250,000/550,000 IOPS, Controller Samsung Phoenix, 3D TLC (V-NAND) форм-фактор: 2280, M емкость: 1000 ГБ скорость чтения/записи: 3500 МБ/с / 3000 МБ/с интерфейс подключения: M.2, PCI-E 3.0 x4 тип флэш-
- M.2 NVMe SSD 2.0TB Verbatim Vi7000G w/Heatsink, Interface: PCIe4.0 x4 / NVMe 1.4, M2 Type 2280 form factor, Sequential Read 7400 MB/s, Sequential Write 6700 MB/s, Random Read 600K IOPS, Random Write 1000K IOPS, DRAM Buffer, TBW: 700TB, PS5 Compatibile, 3DM.2 NVMe SSD 2.0TB Verbatim Vi7000G w/Heatsink, Interface: PCIe4.0 x4 / NVMe 1.4, M2 Type 2280 form factor, Sequential Read 7400 MB/s, Sequential Write 6700 MB/s, Random Read 600K IOPS, Random Write 1000K IOPS, DRAM Buffer, TBW: 700TB, PS5 Compatibile, 3D Бренд Verbatim Объем памяти, ГБ 2000 Назначение PS5,моноблок,н