LYDOS R 50 V 1,8K EU
(72)- M.2 NVMe SSD 2.0TB Samsung SSD 980 PRO w/Heatsink, PCIe4.0 x4 / NVMe1.3c, M2 Type 2280 form factor, Seq. Read: 7000 MB/s, Seq. Write: 5100 MB/s, Max Random 4k: Read /Write: 1,000,000/ 1,000,000 IOPS, Samsung Elpis Controller, 2GB LPDDR4, PCI-SIG® D8 stanM.2 NVMe SSD 2.0TB Samsung SSD 980 PRO w/Heatsink, PCIe4.0 x4 / NVMe1.3c, M2 Type 2280 form factor, Seq. Read: 7000 MB/s, Seq. Write: 5100 MB/s, Max Random 4k: Read /Write: 1,000,000/ 1,000,000 IOPS, Samsung Elpis Controller, 2GB LPDDR4, PCI-SIG® D8 stan Объём накопителя 2000 ГБ Тип ячеек памяти 3D TLC Максимальн
- M.2 NVMe SSD 4.0TB Kingston Fury Renegade, w/HeatSpreader, PCIe4.0 x4 / NVMe, M2 Type 2280 form factor, Sequential Reads 7300 MB/s, Sequential Writes 7000 MB/s, Max Random 4k Read 1,000,000 / Write 1,000,000 IOPS, Phison E18 controller, 4000TBW, 3D NAND TM.2 NVMe SSD 4.0TB Kingston Fury Renegade, w/HeatSpreader, PCIe4.0 x4 / NVMe, M2 Type 2280 form factor, Sequential Reads 7300 MB/s, Sequential Writes 7000 MB/s, Max Random 4k Read 1,000,000 / Write 1,000,000 IOPS, Phison E18 controller, 4000TBW, 3D NAND T Формфактор: M.2 Объем SSD: 4000 ГБ Скорость чтения: 7300 МБ/с
- M.2 NVMe SSD 4.0TB Kingston Fury Renegade, w/Aluminum Heatsink, PCIe4.0 x4 / NVMe, M2 Type 2280 form factor, Sequential Reads 7300 MB/s, Sequential Writes 7000 MB/s, Max Random 4k Read 1,000,000 / Write 1,000,000 IOPS, Phison E18 controller, 4000TBW, 3D NM.2 NVMe SSD 4.0TB Kingston Fury Renegade, w/Aluminum Heatsink, PCIe4.0 x4 / NVMe, M2 Type 2280 form factor, Sequential Reads 7300 MB/s, Sequential Writes 7000 MB/s, Max Random 4k Read 1,000,000 / Write 1,000,000 IOPS, Phison E18 controller, 4000TBW, 3D N Формфактор: M.2 Объем SSD: 4000 ГБ Скорость чтения: 7300 МБ/с
- M.2 NVMe SSD 1.0TB Samsung SSD 970 EVO Plus, Interface: PCIe3.0 x4 / NVMe1.3, M2 Type 2280 form factor, Seq. Read: 3500 MB/s, Seq. Write: 3300 MB/s, Max Random 4k: Read /Write: 600,000/550,000 IOPS, Samsung Phoenix controller, 3D TLC (V-NAND)M.2 NVMe SSD 1.0TB Samsung SSD 970 EVO Plus, Interface: PCIe3.0 x4 / NVMe1.3, M2 Type 2280 form factor, Seq. Read: 3500 MB/s, Seq. Write: 3300 MB/s, Max Random 4k: Read /Write: 600,000/550,000 IOPS, Samsung Phoenix controller, 3D TLC (V-NAND) SSD накопитель, который предлагает большее Твердотельные накопители (SSD)
- 2.5" SATA SSD 1.0TB Samsung 870 EVO MZ-77E1T0BW [R/W:560/530MB/s, 98K IOPS, MGX, V-NAND 3bit MLC] 2.5" SATA SSD 1.0TB Samsung 870 EVO MZ-77E1T0BW [R/W:560/530MB/s, 98K IOPS, MGX, V-NAND 3bit MLC] Объём накопителя 1 ТБ Тип ячеек памяти MLC V-NAND
- M.2 NVMe SSD 500GB Samsung 980 , PCIe3.0 x4 / NVMe1.3, M2 Type 2280, Read: 3500 MB/s, Write: 2300 MB/s, Read /Write: 250,000/550,000 IOPS, Controller Samsung Phoenix, 3D TLC (V-NAND)M.2 NVMe SSD 500GB Samsung 980 , PCIe3.0 x4 / NVMe1.3, M2 Type 2280, Read: 3500 MB/s, Write: 2300 MB/s, Read /Write: 250,000/550,000 IOPS, Controller Samsung Phoenix, 3D TLC (V-NAND) форм-фактор: 2280, M емкость: 500 ГБ скорость чтения/записи: 3100 МБ/с / 2600 МБ/с интерфейс подключения: M.2, PCI-E 3.0 x4 тип флэш-п
- 2.5" SATA SSD 250GB Samsung 870 EVO MZ-77E250B, [R/W:560/530MB/s, 98K IOPS, MGX, V-NAND 3bit MLC]2.5" SATA SSD 250GB Samsung 870 EVO MZ-77E250B [R/W:560/530MB/s, 98K IOPS, MGX, V-NAND 3bit MLC] Capacitate stocare: 250 GB Sistem de stocare a datelor: 2.5" Tip de memorie flash: 3D TLC Viteza maxima de citire: 560 MB/s. Объём накопителя 250 ГБ Тип ячеек памяти V-NAND MLC Максимальная скорость записи, мб/с 5
- 2.5" SATA SSD 500GB Samsung 870 EVO MZ-77E500BW [R/W:560/530MB/s, 98K IOPS, MGX, V-NAND 3bit MLC] 2.5" SATA SSD 500GB Samsung 870 EVO MZ-77E500BW [R/W:560/530MB/s, 98K IOPS, MGX, V-NAND 3bit MLC] Объём накопителя 500 ГБ Тип ячеек памяти MLC V-NAND
- 2.5" SSD 500GB Samsung SSD 870 EVO, SATAIII, Sequential Reads: 560 MB/s, Sequential Writes: 530 MB/s, Max Random 4k: Read: 98,000 IOPS / Write: 88,000 IOPS, 7mm, 512MB Cache, Samsung MKX controller, V-NAND 3bit MLC2.5" SSD 500GB Samsung SSD 870 EVO, SATAIII, Sequential Reads: 560 MB/s, Sequential Writes: 530 MB/s, Max Random 4k: Read: 98,000 IOPS / Write: 88,000 IOPS, 7mm, 512MB Cache, Samsung MKX controller, V-NAND 3bit MLC Объём накопителя 500 ГБ Тип ячеек памяти MLC V-NAND
- M.2 NVMe SSD 1.0TB Samsung 980 , PCIe3.0 x4 / NVMe1.3, M2 Type 2280, Read: 3500 MB/s, Write: 2300 MB/s, Read /Write: 250,000/550,000 IOPS, Controller Samsung Phoenix, 3D TLC (V-NAND)M.2 NVMe SSD 1.0TB Samsung 980 , PCIe3.0 x4 / NVMe1.3, M2 Type 2280, Read: 3500 MB/s, Write: 2300 MB/s, Read /Write: 250,000/550,000 IOPS, Controller Samsung Phoenix, 3D TLC (V-NAND) форм-фактор: 2280, M емкость: 1000 ГБ скорость чтения/записи: 3500 МБ/с / 3000 МБ/с интерфейс подключения: M.2, PCI-E 3.0 x4 тип флэш-
- 2.5" SSD 1.0TB Samsung SSD 870 QVO, SATAIII, Sequential Reads: 560 MB/s, Sequential Writes: 530 MB/s, Max Random 4k: Read: 98,000 IOPS / Write: 88,000 IOPS, 7mm, Cache 1GB LPDDR4, Samsung MKX controller, V-NAND 4bit MLC2.5" SSD 1.0TB Samsung SSD 870 QVO, SATAIII, Sequential Reads: 560 MB/s, Sequential Writes: 530 MB/s, Max Random 4k: Read: 98,000 IOPS / Write: 88,000 IOPS, 7mm, Cache 1GB LPDDR4, Samsung MKX controller, V-NAND 4bit MLC Формфактор 2.5" Объем 1 Tб Интерфейс SATA III Скорость чтения 560 МБ/с Скорость записи 530 МБ/с Т
- M.2 NVMe SSD 1.0TB Samsung SSD 990 PRO w/Heatsink RGB Lights, PCIe4.0 x4 / NVMe2.0, M2 Type 2280 form factor, Seq. Read: 7450 MB/s, Seq. Write: 6900 MB/s, Max Random 4k: Read /Write: 1200,000/1550,000 IOPS, Samsung in-house Controller, 1GB LPDDR4, V-NANDM.2 NVMe SSD 1.0TB Samsung SSD 990 PRO w/Heatsink RGB Lights, PCIe4.0 x4 / NVMe2.0, M2 Type 2280 form factor, Seq. Read: 7450 MB/s, Seq. Write: 6900 MB/s, Max Random 4k: Read /Write: 1200,000/1550,000 IOPS, Samsung in-house Controller, 1GB LPDDR4, V-NAND Бренд: Samsung Модель 990 PRO Форм-фактор накопителя M.2 NVMe
- 2.5" SATA SSD 2.0TB Samsung 870 EVO MZ-77E2T0BW [R/W:560/530MB/s, 98K IOPS, MGX, V-NAND 3bit MLC] 2.5" SATA SSD 2.0TB Samsung 870 EVO MZ-77E2T0BW [R/W:560/530MB/s, 98K IOPS, MGX, V-NAND 3bit MLC] Объём накопителя 2 ТБ Тип ячеек памяти MLC V-NAND
- 2.5" SSD 4.0TB Samsung SSD 870 QVO, SATAIII, Sequential Reads: 560 MB/s, Sequential Writes: 530 MB/s, Max Random 4k: Read: 98,000 IOPS / Write: 88,000 IOPS, 7mm, Cache 4GB LPDDR4, Samsung MKX controller, V-NAND 4bit MLC2.5" SSD 4.0TB Samsung SSD 870 QVO, SATAIII, Sequential Reads: 560 MB/s, Sequential Writes: 530 MB/s, Max Random 4k: Read: 98,000 IOPS / Write: 88,000 IOPS, 7mm, Cache 4GB LPDDR4, Samsung MKX controller, V-NAND 4bit MLC форм-фактор: 2.5" емкость: 4000 ГБ скорость чтения/записи: 560 МБ/с / 530 МБ/с интерфейс подключе
- 2.5" SATA SSD 4.0TB Samsung 870 EVO MZ-77E4T0BW [R/W:560/530MB/s, 98K IOPS, MGX, V-NAND 3bit MLC] 2.5" SATA SSD 4.0TB Samsung 870 EVO MZ-77E4T0BW [R/W:560/530MB/s, 98K IOPS, MGX, V-NAND 3bit MLC] Тип внутренний Серия 870 EVO Объём памяти 4 TB Тип флеш-памяти V-NAND 3bit MLC Форм-фактор 2.5" Интерфейс SATA 6Gb/s Скорость чтения, макс. 560 Mb/s Скорость записи, макс. 530 Mb/s Наработка на отказ 1.5 млн.часов Габа
- M.2 NVMe SSD 250GB Samsung 980 , PCIe3.0 x4 / NVMe1.3, M2 Type 2280, Read: 3500 MB/s, Write: 2300 MB/s, Read /Write: 250,000/550,000 IOPS, Controller Samsung Phoenix, 3D TLC (V-NAND)M.2 NVMe SSD 250GB Samsung 980 , PCIe3.0 x4 / NVMe1.3, M2 Type 2280, Read: 3500 MB/s, Write: 2300 MB/s, Read /Write: 250,000/550,000 IOPS, Controller Samsung Phoenix, 3D TLC (V-NAND) Объём накопителя 256 ГБ Тип ячеек памяти TLC
- M.2 NVMe SSD 250GB Samsung 970 EVO Plus, PCIe3.0 x4 / NVMe1.3, M2 Type 2280, Read: 3500 MB/s, Write: 2300 MB/s, Read /Write: 250,000/550,000 IOPS, Controller Samsung Phoenix, 3D TLC (V-NAND)M.2 NVMe SSD 250GB Samsung 970 EVO Plus, PCIe3.0 x4 / NVMe1.3, M2 Type 2280, Read: 3500 MB/s, Write: 2300 MB/s, Read /Write: 250,000/550,000 IOPS, Controller Samsung Phoenix, 3D TLC (V-NAND) Объём накопителя, ГБ 250 Максимальная скорость записи, Мбайт/с 2300 Максимальная скорость чтения, Мбайт/с 3500
- 2.5" External SSD 512GB Store 'n' Go Mini SSD USB 3.2 Gen 1, Black, Includes USB-C to A / USB-C to C cables, Ultra-small and lightweight SSD, Stylish black design with a 3D surface, Nero Backup Software (Windows OS only), 35g2.5" External SSD 512GB Store 'n' Go Mini SSD USB 3.2 Gen 1, Black, Includes USB-C to A / USB-C to C cables, Ultra-small and lightweight SSD, Stylish black design with a 3D surface, Nero Backup Software (Windows OS only), 35g
- 2.5" SSD 250GB Samsung 870 EVO V-Nand 3bit MLC, R/W:560 MB/s/530 MB/s MB/s, MZ-77E250B/EU2.5" SSD 250GB Samsung 870 EVO V-Nand 3bit MLC, R/W:560 MB/s/530 MB/s MB/s, MZ-77E250B/EU Объем 250 ГБ Форм-фактор 2.5" Интерфейс подключения SATAIII
- M.2 NVMe SSD 500GB Samsung SSD 980, PCIe3.0 x4 / NVMe1.4, M2 Type 2280 form factor, Seq. Read: 3100 MB/s, Seq. Write: 2600 MB/s, Max Random 4k: Read /Write: 400K/470K IOPS, Samsung Pablo Controller, 512MB LPDDR4, V-NAND 3-bit MLCM.2 NVMe SSD 500GB Samsung SSD 980, PCIe3.0 x4 / NVMe1.4, M2 Type 2280 form factor, Seq. Read: 3100 MB/s, Seq. Write: 2600 MB/s, Max Random 4k: Read /Write: 400K/470K IOPS, Samsung Pablo Controller, 512MB LPDDR4, V-NAND 3-bit MLC
- 2.5" SSD 250GB Samsung SSD 870 EVO, SATAIII, Sequential Reads: 560 MB/s, Sequential Writes: 530 MB/s, Max Random 4k: Read: 98,000 IOPS / Write: 88,000 IOPS, 7mm, 512MB Cache, Samsung MKX controller, V-NAND 3bit MLC2.5" SSD 250GB Samsung SSD 870 EVO, SATAIII, Sequential Reads: 560 MB/s, Sequential Writes: 530 MB/s, Max Random 4k: Read: 98,000 IOPS / Write: 88,000 IOPS, 7mm, 512MB Cache, Samsung MKX controller, V-NAND 3bit MLC Объём накопителя 250 ГБ Тип ячеек памяти MLC
- 2.5" SSD 500GB Samsung 870 EVO, SATAIII, Read: 560 MB/s, Write: 530 MB/s, 98K IOPS, MGX, V-NAND 3bit MLC, MZ-77E500B2.5" SSD 500GB Samsung 870 EVO, SATAIII, Read: 560 MB/s, Write: 530 MB/s, 98K IOPS, MGX, V-NAND 3bit MLC, MZ-77E500B Общий объем накопителей: 500 Гб Система хранения данных: 2.5"/7 мм Интерфейс накопителя: SATA-3 (6 Гбит/сек) Тип флеш-памяти: MLC (Multi-Level Cell) Макс. скорость чтения: 560 MB/s Макс. скорость пис
- 2.5" External SSD 1.0TB Store 'n' Go Mini SSD USB 3.2 Gen 1, Black, Includes USB-C to A / USB-C to C cables, Ultra-small and lightweight SSD, Stylish black design with a 3D surface, Nero Backup Software (Windows OS only), 35g2.5" External SSD 1.0TB Store 'n' Go Mini SSD USB 3.2 Gen 1, Black, Includes USB-C to A / USB-C to C cables, Ultra-small and lightweight SSD, Stylish black design with a 3D surface, Nero Backup Software (Windows OS only), 35g
- M.2 NVMe SSD 500GB Samsung SSD 970 EVO Plus, Interface: PCIe3.0 x4 / NVMe1.3, M2 Type 2280 form factor, Seq. Read: 3500 MB/s, Seq. Write: 3200 MB/s, Max Random 4k: Read /Write: 480,000/550,000 IOPS, Samsung Phoenix controller, 3D TLC (V-NAND)M.2 NVMe SSD 500GB Samsung SSD 970 EVO Plus, Interface: PCIe3.0 x4 / NVMe1.3, M2 Type 2280 form factor, Seq. Read: 3500 MB/s, Seq. Write: 3200 MB/s, Max Random 4k: Read /Write: 480,000/550,000 IOPS, Samsung Phoenix controller, 3D TLC (V-NAND) Объём накопителя, ГБ 500 Максимальная скорость записи, Мбайт/с 3200 Максим
- M.2 NVMe SSD 2.0TB Patriot P400 Lite, w/Graphene Heatshield, Interface: PCIe4.0 x4 / NVMe 1.4, M2 Type 2280 form factor, Sequential Read 3300 MB/s, Sequential Write 2700 MB/s, Random Read 380K IOPS, Random Write 540K IOPS, EtE data path protection, TBW: 1M.2 NVMe SSD 2.0TB Patriot P400 Lite, w/Graphene Heatshield, Interface: PCIe4.0 x4 / NVMe 1.4, M2 Type 2280 form factor, Sequential Read 3300 MB/s, Sequential Write 2700 MB/s, Random Read 380K IOPS, Random Write 540K IOPS, EtE data path protection, TBW: 1 Объём накопителя 2000 ГБ Тип ячеек памяти 3D NAND TLC Макси
- 2.5" SSD 2.0TB Samsung SSD 870 QVO, SATAIII, Sequential Reads: 560 MB/s, Sequential Writes: 530 MB/s, Max Random 4k: Read: 98,000 IOPS / Write: 88,000 IOPS, 7mm, Cache 2GB LPDDR4, Samsung MKX controller, V-NAND 4bit MLC2.5" SSD 2.0TB Samsung SSD 870 QVO, SATAIII, Sequential Reads: 560 MB/s, Sequential Writes: 530 MB/s, Max Random 4k: Read: 98,000 IOPS / Write: 88,000 IOPS, 7mm, Cache 2GB LPDDR4, Samsung MKX controller, V-NAND 4bit MLC Категория:SSD Производитель:SAMSUNG Модель:870 QVO Форм-фактор:2.5" Емкость накопителя:2 ТБ Скоро
- M.2 NVMe SSD 2.0TB Samsung SSD 990 PRO w/Hetsing RGB Lights, PCIe4.0 x4 / NVMe2.0, M2 Type 2280 form factor, Seq. Read: 7450 MB/s, Seq. Write: 6900 MB/s, Max Random 4k: Read /Write: 1400,000/1550,000 IOPS, Samsung in-house Controller, 2GB LPDDR4, V-NAND M.2 NVMe SSD 2.0TB Samsung SSD 990 PRO w/Hetsing RGB Lights, PCIe4.0 x4 / NVMe2.0, M2 Type 2280 form factor, Seq. Read: 7450 MB/s, Seq. Write: 6900 MB/s, Max Random 4k: Read /Write: 1400,000/1550,000 IOPS, Samsung in-house Controller, 2GB LPDDR4, V-NAND Бренд: Samsung Модель 990 PRO Форм-фактор накопителя M.2 NVMe
- M.2 NVMe SSD 250GB Patriot P400 Lite, w/Graphene Heatshield, Interface: PCIe4.0 x4 / NVMe 1.4, M2 Type 2280 form factor, Sequential Read 3200 MB/s, Sequential Write 1300 MB/s, Random Read 110K IOPS, Random Write 300K IOPS, EtE data path protection, TBW: 1M.2 NVMe SSD 250GB Patriot P400 Lite, w/Graphene Heatshield, Interface: PCIe4.0 x4 / NVMe 1.4, M2 Type 2280 form factor, Sequential Read 3200 MB/s, Sequential Write 1300 MB/s, Random Read 110K IOPS, Random Write 300K IOPS, EtE data path protection Объём накопителя: 250 ГБ Тип ячеек памяти 3D NAND TLC Максимальная
- M.2 SATA SSD 256GB Verbatim Vi560 S3, SATA 6Gb/s, M.2 Type 2280 form factor, Sequential Reads: 560 MB/s, Sequential Writes: 460 MB/s, Max Random 4k: Read: 102,000 IOPS / Write: 80,000 IOPS, Phison Controller, 3D NAND TLCM.2 SATA SSD 256GB Verbatim Vi560 S3, SATA 6Gb/s, M.2 Type 2280 form factor, Sequential Reads: 560 MB/s, Sequential Writes: 460 MB/s, Max Random 4k: Read: 102,000 IOPS / Write: 80,000 IOPS, Phison Controller, 3D NAND TLC Форм-фактор: M.2 2280 Основной интерфейс: интерфейс Serial ATA со скоростью передачи данных 6 Гб
- .M.2 NVMe SSD 250GB Samsung 970 EVO Plus [PCIe 3.0 x4, R/W:3500/2300MB/s, 250/550K IOPS, Phx, TLC].M.2 NVMe SSD 250GB Samsung 970 EVO Plus [PCIe 3.0 x4, R/W:3500/2300MB/s, 250/550K IOPS, Phx, TLC] SSD накопитель, который предлагает большее Твердотельные накопители (SSD) Samsung серии 970 Evo обеспечивают невероятную скорость, лучшую в своем классе надежность и широкий выбор емкостей вплоть до 2 ТБ*. Новейшая тех