'Samsung'
(709)- Laser Cartridge for Samsung SCX-4720 black Print-Rite/Bloom Laser Cartridge Print-Rite for Samsung SCX-4720,SCX-4520 SCX-4720F/4720FN 3000 pag.Картридж для Samsung SCX-4720 black Print-Rite/Bloom Laser Cartridge Print-Rite for Samsung SCX-4720,SCX-4520 SCX-4720F/4720FN Ресурс 3000 стр.
- M.2 NVMe SSD 1.0TB Samsung SSD 970 EVO Plus, Interface: PCIe3.0 x4 / NVMe1.3, M2 Type 2280 form factor, Seq. Read: 3500 MB/s, Seq. Write: 3300 MB/s, Max Random 4k: Read /Write: 600,000/550,000 IOPS, Samsung Phoenix controller, 3D TLC (V-NAND)M.2 NVMe SSD 1.0TB Samsung SSD 970 EVO Plus, Interface: PCIe3.0 x4 / NVMe1.3, M2 Type 2280 form factor, Seq. Read: 3500 MB/s, Seq. Write: 3300 MB/s, Max Random 4k: Read /Write: 600,000/550,000 IOPS, Samsung Phoenix controller, 3D TLC (V-NAND) SSD накопитель, который предлагает большее Твердотельные накопители (SSD)
- M.2 NVMe SSD 500GB Samsung SSD 980 PRO, PCIe4.0 x4 / NVMe1.3c, M2 Type 2280 form factor, Seq. Read: 6900 MB/s, Seq. Write: 5000 MB/s, Max Random 4k: Read /Write: 800,000/1000,000 IOPS, Samsung Elpis Controller, 512MB LPDDR4, V-NAND 3-bit MLCM.2 NVMe SSD 500GB Samsung SSD 980 PRO, PCIe4.0 x4 / NVMe1.3c, M2 Type 2280 form factor, Seq. Read: 6900 MB/s, Seq. Write: 5000 MB/s, Max Random 4k: Read /Write: 800,000/1000,000 IOPS, Samsung Elpis Controller, 512MB LPDDR4, V-NAND 3-bit MLC Показатели работы SSD следующего поколения Освободите мощность Samsung 980
- 2.5" SSD 2.0TB Samsung SSD 870 QVO, SATAIII, Sequential Reads: 560 MB/s, Sequential Writes: 530 MB/s, Max Random 4k: Read: 98,000 IOPS / Write: 88,000 IOPS, 7mm, Cache 2GB LPDDR4, Samsung MKX controller, V-NAND 4bit MLC2.5" SSD 2.0TB Samsung SSD 870 QVO, SATAIII, Sequential Reads: 560 MB/s, Sequential Writes: 530 MB/s, Max Random 4k: Read: 98,000 IOPS / Write: 88,000 IOPS, 7mm, Cache 2GB LPDDR4, Samsung MKX controller, V-NAND 4bit MLC Категория:SSD Производитель:SAMSUNG Модель:870 QVO Форм-фактор:2.5" Емкость накопителя:2 ТБ Скоро
- M.2 NVMe SSD 500GB Samsung 980 , PCIe3.0 x4 / NVMe1.3, M2 Type 2280, Read: 3500 MB/s, Write: 2300 MB/s, Read /Write: 250,000/550,000 IOPS, Controller Samsung Phoenix, 3D TLC (V-NAND)M.2 NVMe SSD 500GB Samsung 980 , PCIe3.0 x4 / NVMe1.3, M2 Type 2280, Read: 3500 MB/s, Write: 2300 MB/s, Read /Write: 250,000/550,000 IOPS, Controller Samsung Phoenix, 3D TLC (V-NAND) форм-фактор: 2280, M емкость: 500 ГБ скорость чтения/записи: 3100 МБ/с / 2600 МБ/с интерфейс подключения: M.2, PCI-E 3.0 x4 тип флэш-п
- M.2 NVMe SSD 1.0TB Samsung 980 , PCIe3.0 x4 / NVMe1.3, M2 Type 2280, Read: 3500 MB/s, Write: 2300 MB/s, Read /Write: 250,000/550,000 IOPS, Controller Samsung Phoenix, 3D TLC (V-NAND)M.2 NVMe SSD 1.0TB Samsung 980 , PCIe3.0 x4 / NVMe1.3, M2 Type 2280, Read: 3500 MB/s, Write: 2300 MB/s, Read /Write: 250,000/550,000 IOPS, Controller Samsung Phoenix, 3D TLC (V-NAND) форм-фактор: 2280, M емкость: 1000 ГБ скорость чтения/записи: 3500 МБ/с / 3000 МБ/с интерфейс подключения: M.2, PCI-E 3.0 x4 тип флэш-
- M.2 NVMe SSD 1.0TB Samsung SSD 990 PRO w/Heatsink, PCIe4.0 x4 / NVMe2.0, M2 Type 2280 form factor, Seq. Read: 7450 MB/s, Seq. Write: 6900 MB/s, Max Random 4k: Read /Write: 1200,000/1550,000 IOPS, Samsung in-house Controller, 1GB LPDDR4, V-NAND 3-bit MLCM.2 NVMe SSD 1.0TB Samsung SSD 990 PRO w/Heatsink, PCIe4.0 x4 / NVMe2.0, M2 Type 2280 form factor, Seq. Read: 7450 MB/s, Seq. Write: 6900 MB/s, Max Random 4k: Read /Write: 1200,000/1550,000 IOPS, Samsung in-house Controller, 1GB LPDDR4, V-NAND 3-bit MLC Бренд: Samsung Модель 990 PRO Форм-фактор накопителя M.2 NVMe
- M.2 NVMe SSD 1.0TB Samsung SSD 990 PRO w/Heatsink RGB Lights, PCIe4.0 x4 / NVMe2.0, M2 Type 2280 form factor, Seq. Read: 7450 MB/s, Seq. Write: 6900 MB/s, Max Random 4k: Read /Write: 1200,000/1550,000 IOPS, Samsung in-house Controller, 1GB LPDDR4, V-NANDM.2 NVMe SSD 1.0TB Samsung SSD 990 PRO w/Heatsink RGB Lights, PCIe4.0 x4 / NVMe2.0, M2 Type 2280 form factor, Seq. Read: 7450 MB/s, Seq. Write: 6900 MB/s, Max Random 4k: Read /Write: 1200,000/1550,000 IOPS, Samsung in-house Controller, 1GB LPDDR4, V-NAND Бренд: Samsung Модель 990 PRO Форм-фактор накопителя M.2 NVMe
- M.2 NVMe SSD 2.0TB Samsung SSD 990 PRO w/Hetsing RGB Lights, PCIe4.0 x4 / NVMe2.0, M2 Type 2280 form factor, Seq. Read: 7450 MB/s, Seq. Write: 6900 MB/s, Max Random 4k: Read /Write: 1400,000/1550,000 IOPS, Samsung in-house Controller, 2GB LPDDR4, V-NAND M.2 NVMe SSD 2.0TB Samsung SSD 990 PRO w/Hetsing RGB Lights, PCIe4.0 x4 / NVMe2.0, M2 Type 2280 form factor, Seq. Read: 7450 MB/s, Seq. Write: 6900 MB/s, Max Random 4k: Read /Write: 1400,000/1550,000 IOPS, Samsung in-house Controller, 2GB LPDDR4, V-NAND Бренд: Samsung Модель 990 PRO Форм-фактор накопителя M.2 NVMe
- 2.5" SSD 4.0TB Samsung SSD 870 QVO, SATAIII, Sequential Reads: 560 MB/s, Sequential Writes: 530 MB/s, Max Random 4k: Read: 98,000 IOPS / Write: 88,000 IOPS, 7mm, Cache 4GB LPDDR4, Samsung MKX controller, V-NAND 4bit MLC2.5" SSD 4.0TB Samsung SSD 870 QVO, SATAIII, Sequential Reads: 560 MB/s, Sequential Writes: 530 MB/s, Max Random 4k: Read: 98,000 IOPS / Write: 88,000 IOPS, 7mm, Cache 4GB LPDDR4, Samsung MKX controller, V-NAND 4bit MLC форм-фактор: 2.5" емкость: 4000 ГБ скорость чтения/записи: 560 МБ/с / 530 МБ/с интерфейс подключе
- "Laser Cartridge Samsung SCX-4016 Black Laser Cartridge Samsung SCX-4016/4116/4216, 3000 pag. "Laser Cartridge Samsung SCX-4016 Black Laser Cartridge Samsung SCX-4016/4116/4216, 3000 pag.
- M.2 NVMe SSD 250GB Samsung 980 , PCIe3.0 x4 / NVMe1.3, M2 Type 2280, Read: 3500 MB/s, Write: 2300 MB/s, Read /Write: 250,000/550,000 IOPS, Controller Samsung Phoenix, 3D TLC (V-NAND)M.2 NVMe SSD 250GB Samsung 980 , PCIe3.0 x4 / NVMe1.3, M2 Type 2280, Read: 3500 MB/s, Write: 2300 MB/s, Read /Write: 250,000/550,000 IOPS, Controller Samsung Phoenix, 3D TLC (V-NAND) Объём накопителя 256 ГБ Тип ячеек памяти TLC
- M.2 NVMe SSD 250GB Samsung SSD 980, PCIe3.0 x4 / NVMe1.4, M2 Type 2280 form factor, Seq. Read: 2900 MB/s, Seq. Write: 1300 MB/s, Max Random 4k: Read /Write: 230K/320K IOPS, Samsung Pablo Controller, 512MB LPDDR4, V-NAND 3-bit MLCM.2 NVMe SSD 250GB Samsung SSD 980, PCIe3.0 x4 / NVMe1.4, M2 Type 2280 form factor, Seq. Read: 2900 MB/s, Seq. Write: 1300 MB/s, Max Random 4k: Read /Write: 230K/320K IOPS, Samsung Pablo Controller, 512MB LPDDR4, V-NAND 3-bit MLC Объём накопителя 250 ГБ
- M.2 NVMe SSD 250GB Samsung 970 EVO Plus, PCIe3.0 x4 / NVMe1.3, M2 Type 2280, Read: 3500 MB/s, Write: 2300 MB/s, Read /Write: 250,000/550,000 IOPS, Controller Samsung Phoenix, 3D TLC (V-NAND)M.2 NVMe SSD 250GB Samsung 970 EVO Plus, PCIe3.0 x4 / NVMe1.3, M2 Type 2280, Read: 3500 MB/s, Write: 2300 MB/s, Read /Write: 250,000/550,000 IOPS, Controller Samsung Phoenix, 3D TLC (V-NAND) Объём накопителя, ГБ 250 Максимальная скорость записи, Мбайт/с 2300 Максимальная скорость чтения, Мбайт/с 3500
- 2.5" SSD 250GB Samsung SSD 870 EVO, SATAIII, Sequential Reads: 560 MB/s, Sequential Writes: 530 MB/s, Max Random 4k: Read: 98,000 IOPS / Write: 88,000 IOPS, 7mm, 512MB Cache, Samsung MKX controller, V-NAND 3bit MLC2.5" SSD 250GB Samsung SSD 870 EVO, SATAIII, Sequential Reads: 560 MB/s, Sequential Writes: 530 MB/s, Max Random 4k: Read: 98,000 IOPS / Write: 88,000 IOPS, 7mm, 512MB Cache, Samsung MKX controller, V-NAND 3bit MLC Объём накопителя 250 ГБ Тип ячеек памяти MLC
- 2.5" SSD 500GB Samsung SSD 870 EVO, SATAIII, Sequential Reads: 560 MB/s, Sequential Writes: 530 MB/s, Max Random 4k: Read: 98,000 IOPS / Write: 88,000 IOPS, 7mm, 512MB Cache, Samsung MKX controller, V-NAND 3bit MLC2.5" SSD 500GB Samsung SSD 870 EVO, SATAIII, Sequential Reads: 560 MB/s, Sequential Writes: 530 MB/s, Max Random 4k: Read: 98,000 IOPS / Write: 88,000 IOPS, 7mm, 512MB Cache, Samsung MKX controller, V-NAND 3bit MLC Объём накопителя 500 ГБ Тип ячеек памяти MLC V-NAND
- M.2 NVMe SSD 1.0TB Samsung SSD 980, PCIe3.0 x4 / NVMe1.4, M2 Type 2280 form factor, Seq. Read: 3500 MB/s, Seq. Write: 3000 MB/s, Max Random 4k: Read /Write: 500K/480K IOPS, Samsung Pablo Controller, 512MB LPDDR4, V-NAND 3-bit MLCM.2 NVMe SSD 1.0TB Samsung SSD 980, PCIe3.0 x4 / NVMe1.4, M2 Type 2280 form factor, Seq. Read: 3500 MB/s, Seq. Write: 3000 MB/s, Max Random 4k: Read /Write: 500K/480K IOPS, Samsung Pablo Controller, 512MB LPDDR4, V-NAND 3-bit MLC Объём накопителя 1 ТБ
- 2.5" SSD 1.0TB Samsung SSD 870 QVO, SATAIII, Sequential Reads: 560 MB/s, Sequential Writes: 530 MB/s, Max Random 4k: Read: 98,000 IOPS / Write: 88,000 IOPS, 7mm, Cache 1GB LPDDR4, Samsung MKX controller, V-NAND 4bit MLC2.5" SSD 1.0TB Samsung SSD 870 QVO, SATAIII, Sequential Reads: 560 MB/s, Sequential Writes: 530 MB/s, Max Random 4k: Read: 98,000 IOPS / Write: 88,000 IOPS, 7mm, Cache 1GB LPDDR4, Samsung MKX controller, V-NAND 4bit MLC Формфактор 2.5" Объем 1 Tб Интерфейс SATA III Скорость чтения 560 МБ/с Скорость записи 530 МБ/с Т
- 2.5" SSD 1.0TB Samsung SSD 870 EVO, SATAIII, Sequential Reads: 560 MB/s, Sequential Writes: 530 MB/s, Max Random 4k: Read: 98,000 IOPS / Write: 88,000 IOPS, 7mm, 1GB LPDDR4 Cache, Samsung MKX controller, V-NAND 3bit MLC2.5" SSD 1.0TB Samsung SSD 870 EVO, SATAIII, Sequential Reads: 560 MB/s, Sequential Writes: 530 MB/s, Max Random 4k: Read: 98,000 IOPS / Write: 88,000 IOPS, 7mm, 1GB LPDDR4 Cache, Samsung MKX controller, V-NAND 3bit MLC Объём накопителя 1 ТБ Тип ячеек памяти MLC V-NAND
- M.2 NVMe SSD 1.0TB Samsung SSD 990 PRO, PCIe4.0 x4 / NVMe2.0, M2 Type 2280 form factor, Seq. Read: 7450 MB/s, Seq. Write: 6900 MB/s, Max Random 4k: Read /Write: 1200,000/1550,000 IOPS, Samsung in-house Controller, 1GB LPDDR4, V-NAND 3-bit MLCM.2 NVMe SSD 1.0TB Samsung SSD 990 PRO, PCIe4.0 x4 / NVMe2.0, M2 Type 2280 form factor, Seq. Read: 7450 MB/s, Seq. Write: 6900 MB/s, Max Random 4k: Read /Write: 1200,000/1550,000 IOPS, Samsung in-house Controller, 1GB LPDDR4, V-NAND 3-bit MLC Общий объем накопителей: 1000 Гб Система хранения данных: M.2 2280 Интерфе
- M.2 NVMe SSD 2.0TB Samsung SSD 990 PRO, PCIe4.0 x4 / NVMe2.0, M2 Type 2280 form factor, Seq. Read: 7450 MB/s, Seq. Write: 6900 MB/s, Max Random 4k: Read /Write: 1400,000/1550,000 IOPS, Samsung in-house Controller, 2GB LPDDR4, V-NAND 3-bit MLCM.2 NVMe SSD 2.0TB Samsung SSD 990 PRO, PCIe4.0 x4 / NVMe2.0, M2 Type 2280 form factor, Seq. Read: 7450 MB/s, Seq. Write: 6900 MB/s, Max Random 4k: Read /Write: 1400,000/1550,000 IOPS, Samsung in-house Controller, 2GB LPDDR4, V-NAND 3-bit MLC Освободите мощность Samsung 990 PRO для компьютерных систем следующего пок
- M.2 NVMe SSD 256GB Samsung PM991, Interface: PCIe3.0 x4 / NVMe1.3, M2 Type 2242 form factor, Sequential Read: 2050 MB/s, Sequential Write: 1000 MB/s, Max Random 4k: Read / Write: 64K IOPS/220K IOPS, Samsung Phoenix controller, V-NAND TLC, BulkM.2 NVMe SSD 256GB Samsung PM991, Interface: PCIe3.0 x4 / NVMe1.3, M2 Type 2242 form factor, Sequential Read: 2050 MB/s, Sequential Write: 1000 MB/s, Max Random 4k: Read / Write: 64K IOPS/220K IOPS, Samsung Phoenix controller, V-NAND TLC, Bulk Объём накопителя 256 ГБ Тип ячеек памяти V-NAND TLC Максимальная скор
- Battery Li-ion SAMSUNG AA-PB9NC6B for SamsungТип: литий-ионный Напряжение условии: 11,1 Цвет: Черный Емкость: 5200mAh / 6 элементов Размеры: 204 х 49,5 х 20,2 мм Вес: 305 г для SAMSUNG Q320, R470, R522, R620, R580, R590, R468, R428, R429, R430, R460, R463, R464, R465, R466, R467, R478, R480, R519, R530, R780, R462, R468, R470 серии
- M.2 NVMe SSD 500GB Samsung SSD 980, PCIe3.0 x4 / NVMe1.4, M2 Type 2280 form factor, Seq. Read: 3100 MB/s, Seq. Write: 2600 MB/s, Max Random 4k: Read /Write: 400K/470K IOPS, Samsung Pablo Controller, 512MB LPDDR4, V-NAND 3-bit MLCM.2 NVMe SSD 500GB Samsung SSD 980, PCIe3.0 x4 / NVMe1.4, M2 Type 2280 form factor, Seq. Read: 3100 MB/s, Seq. Write: 2600 MB/s, Max Random 4k: Read /Write: 400K/470K IOPS, Samsung Pablo Controller, 512MB LPDDR4, V-NAND 3-bit MLC
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- M.2 NVMe SSD 2.0TB Samsung SSD 980 PRO w/Heatsink, PCIe4.0 x4 / NVMe1.3c, M2 Type 2280 form factor, Seq. Read: 7000 MB/s, Seq. Write: 5100 MB/s, Max Random 4k: Read /Write: 1,000,000/ 1,000,000 IOPS, Samsung Elpis Controller, 2GB LPDDR4, PCI-SIG® D8 stanM.2 NVMe SSD 2.0TB Samsung SSD 980 PRO w/Heatsink, PCIe4.0 x4 / NVMe1.3c, M2 Type 2280 form factor, Seq. Read: 7000 MB/s, Seq. Write: 5100 MB/s, Max Random 4k: Read /Write: 1,000,000/ 1,000,000 IOPS, Samsung Elpis Controller, 2GB LPDDR4, PCI-SIG® D8 stan Объём накопителя 2000 ГБ Тип ячеек памяти 3D TLC Максимальн
- Cartridge Samsung MLT-D109S for SCX-4300, 2000 pagesАналогичный оригинальному продукту картридж PROMCART производится только из вторично переработанных картриджей. Каждая единица сырья тщательно тестируется и оценивается для возможной вторичной переработки, таким образом, происходит сортировка сырья на первый и второй сорт. Первый сорт уходит на производство картриджей
- .M.2 NVMe SSD 500GB Samsung 970 EVO Plus [PCIe 3.0 x4, R/W:3500/3200MB/s, 480/550K IOPS, Phx, TLC].M.2 NVMe SSD 500GB Samsung 970 EVO Plus [PCIe 3.0 x4, R/W:3500/3200MB/s, 480/550K IOPS, Phx, TLC] SSD накопитель, который предлагает большее Твердотельные накопители (SSD) Samsung серии 970 Evo обеспечивают невероятную скорость, лучшую в своем классе надежность и широкий выбор емкостей вплоть до 2 ТБ*. Новейшая тех