Mi Power Bank 3
(34)- 2.5" SSD 1.0TB Silicon Power Ace A55, SATAIII, SeqReads: 560 MB/s, SeqWrites: 530 MB/s, Controller Silicon Motion SM2258XT, MTBF 1.5mln, SLC Cash, BBM, SP Toolbox, 7mm, 3D NAND TLC2.5" SSD 1.0TB Silicon Power Ace A55, SATAIII, SeqReads: 560 MB/s, SeqWrites: 530 MB/s, Controller Silicon Motion SM2258XT, MTBF 1.5mln, SLC Cash, BBM, SP Toolbox, 7mm, 3D NAND TLC Бренд Silicon Power Модель Ace A55 Форм-фактор накопителя 2,5" Память накопителя 1.0 ТБ Контроллер Silicon Motion Тип чипов SLC (Singl
- M.2 NVMe SSD 500GB Silicon Power UD85, Interface:PCIe4.0 x4 / NVMe1.4, M2 Type 2280 form factor, Sequential Reads 3600 MB/s / Writes 2400 MB/s, MTBF 1.5mln, HMB, ECC, SLC Cache, E2E Data Protection, LDPC, Phison E21T, 3D NAND TLCM.2 NVMe SSD 500GB Silicon Power UD85, Interface:PCIe4.0 x4 / NVMe1.4, M2 Type 2280 form factor, Sequential Reads 3600 MB/s / Writes 2400 MB/s, MTBF 1.5mln, HMB, ECC, SLC Cache, E2E Data Protection, LDPC, Phison E21T, 3D NAND TLC Бренд SILICON POWER Модель UD85 Форм-фактор накопителя M.2 NVMe Память накопителя 500 ГБ
- 256GB SSD NVMe M.2 Gen 3 x4 Type 2280 Mushkin Tempest MKNSSDTS256GB-D8, Read 3100MB/s, Write 1400MB/s (solid state drive intern SSD/внутрений высокоскоростной накопитель SSD)256GB SSD NVMe M.2 Gen 3 x4 Type 2280 Mushkin Tempest MKNSSDTS256GB-D8, Read 3100MB/s, Write 1400MB/s (solid state drive intern SSD/внутрений высокоскоростной накопитель SSD)
- 2.5" SSD 256GB Silicon Power Ace A58, SATAIII, SeqReads: 560 MB/s, SeqWrites: 530 MB/s, Controller Phison S11, MTBF 1.5mln, SLC Cash, BBM, Internal Auto-Copy Technology, SP Toolbox, 7mm, 3D NAND TLC2.5" SSD 256GB Silicon Power Ace A58, SATAIII, SeqReads: 560 MB/s, SeqWrites: 530 MB/s, Controller Phison S11, MTBF 1.5mln, SLC Cash, BBM, Internal Auto-Copy Technology, SP Toolbox, 7mm, 3D NAND TLC Объем 256 ГБ Страна-производитель Китай (Тайвань) Скорость чтения 510 МБ/с Скорость записи 480 МБ/с Форм-фактор 2.5"
- M.2 External SSD 240GB Verbatim Vx500 USB 3.1 Gen 2, Sequential Read/Write: up to 500/430 MB/s, Windows®, Mac, PS4 and Xbox One compatible, Light, Portable, Durable, Ultra-compact aluminum housing, Low power consumptionM.2 External SSD 240GB Verbatim Vx500 USB 3.1 Gen 2, Sequential Read/Write: up to 500/430 MB/s, Windows®, Mac, PS4 and Xbox One compatible, Light, Portable, Durable, Ultra-compact aluminum housing, Low power consumption Производитель:Verbatim Модель:Vx500 Тип накопителя:Твердотельный накопитель (SSD) Объем накопител
- M.2 NVMe SSD 480GB Patriot P310, Interface: PCIe3.0 x4 / NVMe 1.3, M2 Type 2280 form factor, Sequential Read 1700 MB/s, Sequential Write 1500 MB/s, Random Read 280K IOPS, Random Write 250K IOPS, SmartECC technology, EtE data path protection, TBW: 240TB, 3M.2 NVMe SSD 480GB Patriot P310, Interface: PCIe3.0 x4 / NVMe 1.3, M2 Type 2280 form factor, Sequential Read 1700 MB/s, Sequential Write 1500 MB/s, Random Read 280K IOPS, Random Write 250K IOPS, SmartECC technology, EtE data path protection, TBW: 240TB, 3 Объём накопителя 480 ГБ
- 512GB SSD NVMe M.2 Gen 3 x4 Type 2280 Mushkin Tempest MKNSSDTS512GB-D8, Read 3300MB/s, Write 2200MB/s (solid state drive intern SSD/внутрений высокоскоростной накопитель SSD)512GB SSD NVMe M.2 Gen 3 x4 Type 2280 Mushkin Tempest MKNSSDTS512GB-D8, Read 3300MB/s, Write 2200MB/s (solid state drive intern SSD/внутрений высокоскоростной накопитель SSD) Бренд MUSHKIN Модель MKNSSDTS512GB-D8 Форм-фактор накопителя M.2 2280 Память накопителя 512 ГБ Контроллер InnoGrit IG5216 Тип чипов 3D NAND Ско
- M.2 External SSD 480GB Verbatim Vx500 USB 3.1 Gen 2, Sequential Read/Write: up to 500/430 MB/s, Windows®, Mac, PS4 and Xbox One compatible, Light, Portable, Durable, Ultra-compact aluminum housing, Low power consumptionM.2 External SSD 480GB Verbatim Vx500 USB 3.1 Gen 2, Sequential Read/Write: up to 500/430 MB/s, Windows®, Mac, PS4 and Xbox One compatible, Light, Portable, Durable, Ultra-compact aluminum housing, Low power consumption Производитель:Verbatim Модель:Vx500 Тип накопителя:Твердотельный накопитель (SSD) Объем накопител
- M.2 NVMe SSD 500GB Samsung SSD 980, PCIe3.0 x4 / NVMe1.4, M2 Type 2280 form factor, Seq. Read: 3100 MB/s, Seq. Write: 2600 MB/s, Max Random 4k: Read /Write: 400K/470K IOPS, Samsung Pablo Controller, 512MB LPDDR4, V-NAND 3-bit MLCM.2 NVMe SSD 500GB Samsung SSD 980, PCIe3.0 x4 / NVMe1.4, M2 Type 2280 form factor, Seq. Read: 3100 MB/s, Seq. Write: 2600 MB/s, Max Random 4k: Read /Write: 400K/470K IOPS, Samsung Pablo Controller, 512MB LPDDR4, V-NAND 3-bit MLC
- M.2 NVMe SSD 4.0TB Corsair MP600 Core XT, Interface: PCIe4.0 x4 / NVMe1.4, M2 Type 2280 form factor, Sequential Reads 5000 MB/s / Writes 4400 MB/s, Random Read / Write IOPS - 600K / 1000K, Phison PS5021-E21T, HMB 64MB, AES-256, TBW - 900 TB, 176L Micron 3M.2 NVMe SSD 4.0TB Corsair MP600 Core XT, Interface: PCIe4.0 x4 / NVMe1.4, M2 Type 2280 form factor, Sequential Reads 5000 MB/s / Writes 4400 MB/s, Random Read / Write IOPS - 600K / 1000K, Phison PS5021-E21T, HMB 64MB, AES-256, TBW - 900 TB, 176L Micron 3
- M.2 NVMe SSD 960GB Patriot P310, Interface: PCIe3.0 x4 / NVMe 1.3, M2 Type 2280 form factor, Sequential Read 2100 MB/s, Sequential Write 1800 MB/s, Random Read 280K IOPS, Random Write 250K IOPS, SmartECC technology, EtE data path protection, TBW: 480TB, 3M.2 NVMe SSD 960GB Patriot P310, Interface: PCIe3.0 x4 / NVMe 1.3, M2 Type 2280 form factor, Sequential Read 2100 MB/s, Sequential Write 1800 MB/s, Random Read 280K IOPS, Random Write 250K IOPS, SmartECC technology, EtE data path protection, TBW: 480TB Объём накопителя 960 ГБ Тип ячеек памяти 3D NAND TLC Максималь
- 2.5" SSD 512GB GOODRAM CX400 Gen.2, SATAIII, Sequential Reads: 550 MB/s, Sequential Writes: 500 MB/s, Maximum Random 4k: Read: 75,500 IOPS / Write: 76,800 IOPS, Thickness- 7mm, Controller Phison PS3111-S11, 3D NAND TLC2.5" SSD 512GB GOODRAM CX400 Gen.2, SATAIII, Sequential Reads: 550 MB/s, Sequential Writes: 500 MB/s, Maximum Random 4k: Read: 75,500 IOPS / Write: 76,800 IOPS, Thickness- 7mm, Controller Phison PS3111-S11, 3D NAND TLC Объем 512 ГБ Скорость чтения 550 МБ/с Скорость записи 500 МБ/с Энергопотребление В режиме чтения:
- M.2 SATA SSD 256GB Verbatim Vi560 S3, SATA 6Gb/s, M.2 Type 2280 form factor, Sequential Reads: 560 MB/s, Sequential Writes: 460 MB/s, Max Random 4k: Read: 102,000 IOPS / Write: 80,000 IOPS, Phison Controller, 3D NAND TLCM.2 SATA SSD 256GB Verbatim Vi560 S3, SATA 6Gb/s, M.2 Type 2280 form factor, Sequential Reads: 560 MB/s, Sequential Writes: 460 MB/s, Max Random 4k: Read: 102,000 IOPS / Write: 80,000 IOPS, Phison Controller, 3D NAND TLC Форм-фактор: M.2 2280 Основной интерфейс: интерфейс Serial ATA со скоростью передачи данных 6 Гб
- M.2 NVMe SSD 1.0TB Verbatim Vi3000, Interface: PCIe3.0 x4 / NVMe 1.3, M2 Type 2280 form factor, Sequential Read 3300 MB/s, Sequential Write 3300 MB/s, Random Read 150K IOPS, Random Write 100K IOPS, Phison E13T, TBW: 750TB, 3D NAND TLCM.2 NVMe SSD 1.0TB Verbatim Vi3000, Interface: PCIe3.0 x4 / NVMe 1.3, M2 Type 2280 form factor, Sequential Read 3300 MB/s, Sequential Write 3300 MB/s, Random Read 150K IOPS, Random Write 100K IOPS, Phison E13T, TBW: 750TB, 3D NAND TLC Форм-фактор: M.2 Основной интерфейс: PCI Express 3-го поколения, X4 линии на один п
- Fujitsu SSD SATA 6G 480GB Mixed-Use 3.5' H-P EPFujitsu SSD SATA 6G 480GB Mixed-Use 3.5' H-P EP Модель S26361-F5732-L480 Жесткий диск SATA 6 гбит / с, 480 ГБ 3,5 дюйма Тип диска SSD Форм-фактор диска 3,5" (LFF) Тип привода Внутренний Емкость накопителя 480 ГБ Интерфейс жесткого диска SATA
- M.2 NVMe SSD 256GB Patriot P300, Interface: PCIe3.0 x4 / NVMe 1.3, M2 Type 2280 form factor, Sequential Read 1700 MB/s, Sequential Write 1100 MB/s, Random Read 290K IOPS, Random Write 260K IOPS, TBW: 80TB, 3D NAND TLCM.2 NVMe SSD 256GB Patriot P300, Interface: PCIe3.0 x4 / NVMe 1.3, M2 Type 2280 form factor, Sequential Read 1700 MB/s, Sequential Write 1100 MB/s, Random Read 290K IOPS, Random Write 260K IOPS, TBW: 80TB, 3D NAND TLC Объем 256 ГБ Скорость чтения 1700 MB Скорость записи 1100 MB Форм-фактор M.2 Интерфейс подключения P
- .M.2 SATA SSD 256GB Transcend TS256GMTS430S.M.2 SATA SSD 256GB Transcend TS256GMTS430S [42mm, R/W:530/400MB/s, 45K/70K IOPS, SM2258, 3DTLC] Volum 256 GB Viteza de citire 500 MB / s (SATA 6 GB / s) Viteza de inregistrare 410 MB / s Consumul de energie 3,3V ± 5% Factorul de forma M.2 MTBF 1.500.000 h Interfata SATAIII Tipul de celule de memorie 3D NAND (TLC)
- M.2 NVMe SSD 256GB Verbatim Vi3000, Interface: PCIe3.0 x4 / NVMe 1.3, M2 Type 2280 form factor, Sequential Read 3300 MB/s, Sequential Write 1300 MB/s, Random Read 100K IOPS, Random Write 100K IOPS, Phison E13T, TBW: 185TB, 3D NAND TLCM.2 NVMe SSD 256GB Verbatim Vi3000, Interface: PCIe3.0 x4 / NVMe 1.3, M2 Type 2280 form factor, Sequential Read 3300 MB/s, Sequential Write 1300 MB/s, Random Read 100K IOPS, Random Write 100K IOPS, Phison E13T, TBW: 185TB, 3D NAND TLC Формфактор: M.2 Объем SSD: 256 ГБ Скорость чтения: 3300 МБ/с Скорость записи: 1300
- M.2 NVMe SSD 500GB Samsung 980 , PCIe3.0 x4 / NVMe1.3, M2 Type 2280, Read: 3500 MB/s, Write: 2300 MB/s, Read /Write: 250,000/550,000 IOPS, Controller Samsung Phoenix, 3D TLC (V-NAND)M.2 NVMe SSD 500GB Samsung 980 , PCIe3.0 x4 / NVMe1.3, M2 Type 2280, Read: 3500 MB/s, Write: 2300 MB/s, Read /Write: 250,000/550,000 IOPS, Controller Samsung Phoenix, 3D TLC (V-NAND) форм-фактор: 2280, M емкость: 500 ГБ скорость чтения/записи: 3100 МБ/с / 2600 МБ/с интерфейс подключения: M.2, PCI-E 3.0 x4 тип флэш-п
- .M.2 NVMe SSD 256GB ADATA XPG SX6000 Lite [PCIe 3.0 x4, R/W:1800/900MB/s, 100/170K IOPS, 3DTLC] .M.2 NVMe SSD 256GB ADATA XPG SX6000 Lite [PCIe 3.0 x4, R/W:1800/900MB/s, 100/170K IOPS, 3DTLC] Пришло время модернизации с PCIe Ищете, чем заменить твердотельный накопитель SATA? В таком случае остановите свой выбор на твердотельном накопителе SX6000 Lite PCIe Gen3x4 M.2 2280. Благодаря поддержке NVMe 1.3 и наличи
- .M.2 NVMe SSD 500GB Samsung 970 EVO Plus [PCIe 3.0 x4, R/W:3500/3200MB/s, 480/550K IOPS, Phx, TLC].M.2 NVMe SSD 500GB Samsung 970 EVO Plus [PCIe 3.0 x4, R/W:3500/3200MB/s, 480/550K IOPS, Phx, TLC] Capacitate stocare: 500 GB Sistem de stocare a datelor: M.2 2280 Interfa?a SSD: NVMe PCIe 3.0 x4 Tip de memorie flash: TLC (Tri-Level Cell) Формфактор: M.2 Объем SSD: 500 ГБ Скорость чтения: 3500 МБ/с Скорость
- 2.5" SSD 960GB KIOXIA (Toshiba) Exceria, SATAIII, SeqReads: 555 MB/s, SeqWrites: 540 MB/s, Read / Write Speed: 81000 IOPS / 88000 IOPS, 7mm, Controller SMI SM2258XT, BiCS Flash TLC2.5" SSD 960GB KIOXIA (Toshiba) Exceria, SATAIII, SeqReads: 555 MB/s, SeqWrites: 540 MB/s, Read / Write Speed: 81000 IOPS / 88000 IOPS, 7mm, Controller SMI SM2258XT, BiCS Flash TLC Формфактор: 2.5 Объем SSD: 960 ГБ Скорость чтения: 555 МБ/с. Скорость записи: 540 МБ/с Тип ячеек памяти: TLC (3-bit) Интерфейс подключе
- M.2 NVMe SSD 1.0TB Samsung 980 , PCIe3.0 x4 / NVMe1.3, M2 Type 2280, Read: 3500 MB/s, Write: 2300 MB/s, Read /Write: 250,000/550,000 IOPS, Controller Samsung Phoenix, 3D TLC (V-NAND)M.2 NVMe SSD 1.0TB Samsung 980 , PCIe3.0 x4 / NVMe1.3, M2 Type 2280, Read: 3500 MB/s, Write: 2300 MB/s, Read /Write: 250,000/550,000 IOPS, Controller Samsung Phoenix, 3D TLC (V-NAND) форм-фактор: 2280, M емкость: 1000 ГБ скорость чтения/записи: 3500 МБ/с / 3000 МБ/с интерфейс подключения: M.2, PCI-E 3.0 x4 тип флэш-
- M.2 NVMe SSD 2.0TB Verbatim Vi3000, Interface: PCIe3.0 x4 / NVMe 1.3, M2 Type 2280 form factor, Sequential Read 3300 MB/s, Sequential Write 3300 MB/s, Random Read 150K IOPS, Random Write 100K IOPS, Phison E13T, TBW: 1500TB, 3D NAND TLCM.2 NVMe SSD 2.0TB Verbatim Vi3000, Interface: PCIe3.0 x4 / NVMe 1.3, M2 Type 2280 form factor, Sequential Read 3300 MB/s, Sequential Write 3300 MB/s, Random Read 150K IOPS, Random Write 100K IOPS, Phison E13T, TBW: 1500TB, 3D NAND TLC Общий объем памяти 2 ТБ Количество бит на ячейку 3 бит TLC Структура памяти 3D NAN
- M.2 NVMe SSD 2.0TB Verbatim Vi5000, Interface: PCIe4.0 x4 / NVMe 1.4, M2 Type 2280 form factor, Sequential Read 5000 MB/s, Sequential Write 4300 MB/s, Random Read 715K IOPS, Random Write 730K IOPS, TBW: 500TB, 3D NAND TLCM.2 NVMe SSD 2.0TB Verbatim Vi5000, Interface: PCIe4.0 x4 / NVMe 1.4, M2 Type 2280 form factor, Sequential Read 5000 MB/s, Sequential Write 4300 MB/s, Random Read 715K IOPS, Random Write 730K IOPS, TBW: 500TB, 3D NAND TLC Формфактор: M.2 Объем SSD: 2000 ГБ Скорость чтения: 5000 МБ/с Скорость записи: 4300 МБ/с Тип яче
- M.2 NVMe SSD 2.0TB Verbatim Vi7000G w/Heatsink, Interface: PCIe4.0 x4 / NVMe 1.4, M2 Type 2280 form factor, Sequential Read 7400 MB/s, Sequential Write 6700 MB/s, Random Read 600K IOPS, Random Write 1000K IOPS, DRAM Buffer, TBW: 700TB, PS5 Compatibile, 3DM.2 NVMe SSD 2.0TB Verbatim Vi7000G w/Heatsink, Interface: PCIe4.0 x4 / NVMe 1.4, M2 Type 2280 form factor, Sequential Read 7400 MB/s, Sequential Write 6700 MB/s, Random Read 600K IOPS, Random Write 1000K IOPS, DRAM Buffer, TBW: 700TB, PS5 Compatibile, 3D Бренд Verbatim Объем памяти, ГБ 2000 Назначение PS5,моноблок,н
- .M.2 NVMe SSD 2.0TB Samsung 970 EVO Plus [PCIe 3.0 x4, R/W:3500/3300MB/s, 620/560K IOPS, Phx, TLC ].M.2 NVMe SSD 2.0TB Samsung 970 EVO Plus [PCIe 3.0 x4, R/W:3500/3300MB/s, 620/560K IOPS, Phx, TLC] Capacitate stocare: 2000 GB Sistem de stocare a datelor: M.2 2280 Interfa?a SSD: NVMe PCIe 3.0 x4 Tip de memorie flash: TLC (Tri-Level Cell) Формфактор: M.2 Объем SSD: 2000 ГБ Скорость чтения: 3500 МБ/с Скорость
- M.2 NVMe SSD 1.0TB Corsair MP700, Interface: PCIe5.0 x4 / NVMe1.4, M2 Type 2280 form factor, Sequential Reads 9500 MB/s / Writes 8500 MB/s, Random Read / Write IOPS - 1300K / 1600K, Phison E26, 2GB DRAM, AES 256-bit, SLC Write Cache, TBW-700 TB, 232L MicrM.2 NVMe SSD 1.0TB Corsair MP700, Interface: PCIe5.0 x4 / NVMe1.4, M2 Type 2280 form factor, Sequential Reads 9500 MB/s / Writes 8500 MB/s, Random Read / Write IOPS - 1300K / 1600K, Phison E26, 2GB DRAM, AES 256-bit, SLC Write Cache, TBW-700 TB, 232L Micr Формфактор: M.2 Объем SSD: 1000 ГБ Скорость чтения: 9500 МБ/с