ZenDrive SDRW-08D2S-U LITE
(4)- M.2 NVMe SSD 1.0TB VIPER (by Patriot) VP4300 LITE, ultra-thin heatspreader, Interface: PCIe4.0 x4 / NVMe 2.0, M2 Type 2280 form factor, Seq Read 7400 MB/s, Write 6400 MB/s, Random Read 1000K IOPS, Write 700K IOPS, HMB, Thermal Throttling, PS5 Compatible, M.2 NVMe SSD 1.0TB VIPER (by Patriot) VP4300 LITE, ultra-thin heatspreader, Interface: PCIe4.0 x4 / NVMe 2.0, M2 Type 2280 form factor, Seq Read 7400 MB/s, Write 6400 MB/s, Random Read 1000K IOPS, Write 700K IOPS, HMB, Thermal Throttling, PS5 Compatible, Бренд VIPER (by Patriot) Модель VP4300 LITE Форм-фактор накопи
- M.2 NVMe SSD 2.0TB VIPER (by Patriot) VP4300 LITE, ultra-thin heatspreader, Interface: PCIe4.0 x4 / NVMe 2.0, M2 Type 2280 form factor, Seq Read 7400 MB/s, Write 6400 MB/s, Random Read 1000K IOPS, Write 700K IOPS, HMB, Thermal Throttling, PS5 Compatible, M.2 NVMe SSD 2.0TB VIPER (by Patriot) VP4300 LITE, ultra-thin heatspreader, Interface: PCIe4.0 x4 / NVMe 2.0, M2 Type 2280 form factor, Seq Read 7400 MB/s, Write 6400 MB/s, Random Read 1000K IOPS, Write 700K IOPS, HMB, Thermal Throttling, PS5 Compatible,
- M.2 NVMe SSD 500GB Patriot P400 Lite, w/Graphene Heatshield, Interface: PCIe4.0 x4 / NVMe 1.4, M2 Type 2280 form factor, Sequential Read 3500 MB/s, Sequential Write 2400 MB/s, Random Read 220K IOPS, Random Write 500K IOPS, EtE data path protection, TBW: 2M.2 NVMe SSD 500GB Patriot P400 Lite, w/Graphene Heatshield, Interface: PCIe4.0 x4 / NVMe 1.4, M2 Type 2280 form factor, Sequential Read 3500 MB/s, Sequential Write 2400 MB/s, Random Read 220K IOPS, Random Write 500K IOPS, EtE data path protection, TBW: 2 Объём накопителя 500 ГБ Тип ячеек памяти 3D NAND TLC Максималь
- M.2 NVMe SSD 1.0TB Patriot P400 Lite, w/Graphene Heatshield, Interface: PCIe4.0 x4 / NVMe 1.4, M2 Type 2280 form factor, Sequential Read 3500 MB/s, Sequential Write 2700 MB/s, Random Read 340K IOPS, Random Write 540K IOPS, EtE data path protection, TBW: 5M.2 NVMe SSD 1.0TB Patriot P400 Lite, w/Graphene Heatshield, Interface: PCIe4.0 x4 / NVMe 1.4, M2 Type 2280 form factor, Sequential Read 3500 MB/s, Sequential Write 2700 MB/s, Random Read 340K IOPS, Random Write 540K IOPS, EtE data path protection, TBW: 5 Объём накопителя 1000 ГБ Тип ячеек памяти 3D NAND TLC Макси
